Positive resist composition and pattern forming method

ABSTRACT

A positive photosensitive composition includes:
         (A) a resin that has an acid decomposable repeating unit of formula (I) and increases its solubility in an alkali developer by action of an acid;   (B) a compound that generates an acid upon irradiation;   (C) a resin that has: a fluorine atom and/or a silicon atom; and a group selected from groups (x) to (z); and   (D) a solvent:   (x) an alkali soluble group,   (y) a group which decomposes by action of an alkali developer and increases a solubility of the resin (C) in an alkali developer, and   (z) a group which decomposes by action of an acid,       

     
       
         
         
             
             
         
       
         
         
           
             wherein, 
             Xa 1  represents hydrogen, alkyl, cyano or halogen, 
             Ry 1  to Ry 3  each independently represents alkyl or cycloalkyl, and at least two of Ry 1  to Ry 3  may be coupled to form a ring, and 
             Z represents a divalent linking group.

This is a Continuation of U.S. application Ser. No. 12/593,353, filedSep. 28, 2009 which is a 371 National Stage entry of PCT/JP2008/056622,filed Mar. 27, 2008, which claims priority under 35 U.S.C. §119 from JP2007-085958, filed Mar. 28, 2007 and JP 2008-076598, filed Mar. 24,2008, the disclosures of which are incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a positive resist composition for usein fabrication steps of semiconductors such as ICs, production ofcircuit boards for liquid crystals, thermal heads, etc., andlithographic steps of other photoapplications, and a pattern formingmethod using the composition. In particular, the invention relates to apositive resist composition suited for exposure with an immersion typeprojection exposure apparatus employing far ultraviolet light having awavelength of 300 nm or less as an exposure light, and a pattern formingmethod using the composition.

BACKGROUND ART

The trend toward miniaturization of semiconductor elements has lead to adecrease in the wavelength of exposure lights and an increase in thenumerical aperture (NA) of projection lenses. As a result, an exposureapparatus which has an NA of 0.84 and employs an ArF excimer laserhaving a wavelength of 193 nm as a light source has been developed. Asis generally well known, resolution and focal depth can be expressed bythe following equations:

(Resolution)=k ₁·(λ/NA)

(Focal depth)=±k ₂·λ/NA²

wherein λ is the wavelength of the exposure light, NA is the numericalaperture of the projection lens, and k₁ and k₂ are coefficients relatingto the process.

For achieving enhanced resolution by further reduction in thewavelength, an exposure apparatus employing an F₂ excimer laser having awavelength of 157 nm as a light source is under investigation. Sincematerials for the lens to be used in the exposure apparatus andmaterials for resists are limited strictly, however, it is verydifficult to stabilize the manufacturing cost of the apparatus ormaterial or stabilize their quality. There is hence a possibility thatan exposure apparatus and a resist having sufficient performance andstability cannot be provided within a required period.

As a technique for enhancing resolution of an optical microscope, aso-called immersion method, that is, a method of filling a liquid with ahigh refractive index (which may hereinafter be called “immersionliquid”) between the projection lens and the sample is known.

This “immersion” has the following effects. Assuming that the wavelengthof the exposure light in air is λ₀, the refractive index of theimmersion liquid relative to that of air is n, the convergence halfangle of light is θ and NA₀=sin θ, the resolution and the focal depthwhen immersion is performed can be expressed by the following equations:

(Resolution)=k ₁·(λ₀ /n)/NA₀

(Focal depth)=±k ₂·(λ₀ /n)/NA₀ ²

This means that the immersion produces the same effect as the use of anexposure light having a wavelength of 1/n. In other words, supposingthat optical projection systems equal in NA are employed, the focaldepth can be made n times larger by the immersion.

This is valid in any pattern profile. The immersion can therefore beused in combination with a super resolution technique such as the phaseshift method or off axis illumination method which are being studiednow.

Examples of an apparatus which has utilized the above-described effectfor the transfer of fine image patterns of semiconductor devices aredescribed in JP-A-57-153433 and the like.

Recent progress in the immersion exposure technique is reported in TheProceedings of The International Society for Optical Engineering (SPIEProc.), 4688, 11(2002), J Vac. Sci. Technol., B 17(1999), TheProceedings of The International Society for Optical Engineering (SPIEProc.), 3999, 2(2000), etc. When an ArF excimer laser is used as a lightsource, pure water (refractive index at 193 nm: 1.44) is presumed to bemost promising as an immersion liquid from the standpoints of safety inhandling as well as transmittance and refractive index at 193 nm. Afluorine-containing solution is being studied as an immersion liquid foruse in the exposure using an F₂ excimer laser as a light source inconsideration of balance between transmittance and refractive index at157 nm. An immersion liquid satisfactory in view of environmental safetyand refractive index however has not yet been found. Judging from thedegree of the effect of the immersion and the maturity of resist, theimmersion exposure technique will be first utilized in ArF exposureapparatuses.

Since the advent of a resist for KrF excimer laser (248 nm), chemicalamplification has been employed as an image forming method of a resistfor compensating a reduction in the sensitivity caused by lightabsorption. The image forming method, for example, using positivechemical amplification is a method of exposing a resist to light tocause decomposition of an acid generator in the exposed portions andgenerate an acid, subjecting the resulting resist to post-exposure bake(PEB) to utilize the acid thus generated as a reaction catalyst toconvert an alkali-insoluble group into an alkali-soluble group, andremoving the exposed portions by alkali development. As a chemicalamplification type resist composition, resist compositions obtained bymixing two or more resins having specific structures are proposed, forexample, in WO2005/003198 and JP-A-2002-303978. Although resists for ArFexcimer laser using the chemical amplification mechanism are haverecently become major resists, they need improvement because patterncollapse occurs when they are exposed to light through a mask with avery fine mask size.

It has been pointed out that when a chemical amplification type resistis exposed to immersion exposure, the resist layer comes into contactwith the immersion liquid during exposure, resulting in deterioration ofthe resist layer or emission, from the resist layer, of componentsadversely affecting on the immersion liquid. International PublicationWO 2004/068242 describes an example of a change in resist performancecaused by immersing a resist for ArF exposure in water before and afterexposure, while pointing out that this change is a problem in immersionexposure.

In an immersion exposure process, exposure using a scanning typeimmersion exposure apparatus needs movement of the immersion liquidkeeping pace with the movement of a lens. If not, the exposure speeddecreases, which may adversely affect on the productivity. When theimmersion liquid is water, the resist film is desired to be hydrophobicand have good followability of water.

In addition, it is actually difficult to find an appropriate combinationof a resin, photoacid generator, additive and solvent capable ofsatisfying the integrated performance of a resist. In forming finepatterns with a line width of 100 nm or less, even if the resolutionperformance is excellent, collapse of line patterns occurs, which maylead to defects during fabrication of a device. There is therefore ademand for overcoming this collapse of patterns and reducing line edgeroughness which will otherwise disturb formation of uniform linepatterns.

The term “line edge roughness” means that line patterns of a resist andedge of the interface of a substrate are shaped irregularly in adirection vertical to the line direction due to properties of theresist. Such patterns viewed from right above seem to have an edge withconcavities and convexities (approximately from ± several nm to ±several tens of nm). Since these concavities and convexities aretransferred to the substrate in an etching step, large concavities andconvexities may deteriorate electrical properties, resulting in areduced yield.

DISCLOSURE OF THE INVENTION

An object of the invention is to provide a positive resist compositioncausing less line edge roughness due to normal exposure or immersionexposure and excellent in followability of water during immersionexposure; and a pattern forming method using the composition.

<1> A positive photosensitive composition comprising:

(A) a resin that has an acid decomposable repeating unit represented byformula (I) and increases its solubility in an alkali developer byaction of an acid;

(B) a compound that generates an acid in irradiation with actinic lightor radiation;

(C) a resin that has: at least one of a fluorine atom and a siliconatom; and a group selected from the group consisting of groups (x) to(z); and

(D) a solvent:

(x) an alkali soluble group,

(y) a group which decomposes by action of an alkali developer andincreases a solubility of the resin (C) in an alkali developer, and

(z) a group which decomposes by action of an acid,

wherein,

Xa₁ represents a hydrogen atom, an alkyl group, a cyano group or ahalogen atom,

Ry₁ to Ry₃ each independently represents an alkyl group or a cycloalkylgroup, and at least two of Ry₁ to Ry₃ may be coupled to form a ringstructure, and

Z represents a divalent linking group.

<2> A positive resist composition as described above in <1>, wherein Zin the formula (I) is a divalent linear hydrocarbon group or a divalentcyclic hydrocarbon group.

<3> A positive resist composition as described above in <1> or <2>,wherein the resin (A) further has a repeating unit having at least onegroup selected from a lactone group, a hydroxyl group, a cyano group andan acid group.

<4> A positive resist composition as described above in any one of <1>to <3>, wherein the component (B) comprises a compound generating anacid represented by formula (BII):

wherein in the formula (BII),

Rb₁ represents a group having an electron withdrawing group,

Rb₂ represents an organic group having no electron withdrawing group,

m and n each stands for an integer from 0 to 5 with the proviso thatm+n≦5,

when m stands for 2 or greater, a plurality of Rb₁s may be the same ordifferent, and

when n stands for 2 or greater, a plurality of Rb₂s may be the same ordifferent.

<5> A positive resist composition as described above in <4>, wherein inthe formula (BII), m stands for from 1 to 5 and the electron withdrawinggroup of Rb₁ is at least one atom or group selected from a fluorineatom, a fluoroalkyl group, a nitro group, an ester group, and a cyanogroup.

<6> A positive resist composition as described above in <4> or <5>,wherein in the formula (BII), the organic group having no electronwithdrawing group of Rb₂ is a group having an alicyclic group.

<7> A positive resist composition as described above in any one of <1>to <6>, wherein the resin (C) has a repeating unit having a lactonegroup.

<8> A positive resist composition as described above in any one of <1>to <7>, wherein the resin (C) is a resin having a fluorine-containingC₁₋₄ alkyl group, a fluorine-containing cycloalkyl group or afluorine-containing aryl group.

<9> A positive resist composition as described above in any one of <1>to <8>, wherein the resin (C) has an alcoholic hydroxyl group and analcohol moiety of the alcoholic hydroxyl group is a fluorinated alcohol.

<10> A positive resist composition as described above in any one of <1>to <9>, further comprising (E) a basic compound.

<11> A positive resist composition as described above in <10>, whichcontains at least one of 2,6-diisopropylaniline and tetrabutylammoniumhydroxide as the basic compound (E).

<12> A positive resist composition as described above in any one of <1>to <11>, which contains at least one of propylene glycol monomethylether acetate, 2-heptanone and γ-butyrolactone as Solvent (D).

<13> A positive resist composition as described above in any one of <1>to <12>, further comprising (F) a surfactant.

<14> A positive resist composition as described above in any one of <1>to <13>, for use in exposure to light having a wavelength of 200 nm orless.

<15> A pattern forming method comprising: forming a resist film with apositive resist composition as described above in any one of <1> to <9>;and exposing and developing the resist film.

<16> A pattern forming method as described above in any one of <1> to<15>, wherein the resist film is exposed via an immersion liquid.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view (side surface) relating to evaluation offollowability of water; and

FIGS. 2A to 2D are schematic views (upper view) relating to evaluationof followability of water.

BEST MODE FOR CARRYING OUT THE INVENTION

The present invention will hereinafter be described specifically.

In this specification, when a group (atomic group) is indicated withoutspecifying whether it is substituted or unsubstituted, the groupembraces both of a group having no substituents and a group having asubstituent. For example, the term “alkyl group” embraces not only analkyl group having no substituent (unsubstituted alkyl group) but alsoan alkyl group having a substituent (substituted alkyl group).

(A) Resin that Increases its Solubility in an Alkali Developer by Actionof an Acid

The resin to be used in the positive photosensitive composition of theinvention which increases its solubility in an alkali developer byaction of an acid is a resin (which may be called “resin of Component(A)” having an acid decomposable repeating unit represented by thefollowing formula (I):

wherein, in the formula (I),

Xa₁ represents a hydrogen atom, an alkyl group, a cyano group or ahalogen atom,

Ry₁ to Ry₃ each independently represents an alkyl group or a cycloalkylgroup or at least two of Ry₁ to Ry₃ may be coupled to form a monocyclicor polycyclic hydrocarbon structure, and

Z represents a divalent linking group.

In the formula (I), the alkyl group of Xa₁ may be substituted with ahydroxyl group, halogen atom or the like. Xa₁ is preferably a hydrogenatom or a methyl group.

The alkyl group of Ry₁ to Ry₃ may be either a linear alkyl group or abranched alkyl group. It may have a substituent. Examples of thesubstituent which it may have include fluorine atom, chlorine atom,bromine atom, hydroxyl group, and cyano group. The linear or branchedalkyl group is preferably a C₁₋₈ alkyl group, more preferably a C₁₋₄alkyl group. Examples include methyl group, ethyl group, propyl group,isopropyl group, butyl group, isobutyl group and t-butyl group, withmethyl and ethyl groups being preferred.

Examples of the cycloalkyl group of Ry₁ to Ry₃ include monocyclic C₃₋₈cycloalkyl groups and polycyclic C₇₋₁₄ cycloalkyl groups. They may havea substituent. Preferred examples of the monocyclic cycloalkyl groupinclude cyclopentyl group, cyclohexyl group and cyclopropyl group.Preferred examples of the polycyclic cycloalkyl group include adamantylgroup, norbornane group, tetracyclododecanyl group, tricyclodecanylgroup and diamantyl group.

The monocyclic hydrocarbon structure formed by coupling of at least twoof Ry₁ to Ry₃ is preferably a cyclopentyl group or a cyclohexyl group.The polycyclic hydrocarbon structure formed by coupling of at least twoof Ry₁ to Ry₃ is preferably an adamantyl group, a norbornyl group or atetracyclododecanyl group.

Z is preferably a divalent linear hydrocarbon group or a divalent cyclichydrocarbon group. It may have a substituent. Examples of thesubstituent which it may have include fluorine atom, chlorine atom,bromine atom, hydroxyl group, and cyano group. Z is preferably adivalent C₁₋₂₀ linking group, more preferably a linear C₁₋₄ alkylenegroup, or a cyclic C₅₋₂₀ alkylene group, or a combination of them.Examples of the linear C₁₋₄ alkylene group include methylene group,ethylene group, propylene group, and butylene group. It may be linear orbranched. It is preferably a methylene group. Examples of the cyclicC₅₋₂₀ alkylene group include monocycle alkylene groups such ascyclopentylene group and cyclohexylene group and polycyclic alkylenegroups such as norbomylene group and adamantylene group, withadamantylene group being preferred.

A polymerizable compound for forming the repeating unit represented bythe formula (I) can easily be synthesized by a known method. Forexample, it can be synthesized in accordance with a similar method tothat described in JP-A-2005-331918 by reacting an alcohol with acarboxylic acid halogenide compound under basic conditions and thenreacting the reaction product with a carboxylic acid compound underbasic conditions as shown by the following reaction scheme:

Preferred specific examples of the repeating unit represented by theformula (I) are shown below, but the present invention is not limited tothem. In the formula, Xa₁ represents a hydrogen atom, an alkyl group, acyano group or a halogen atom.

The repeating unit represented by the formula (I) decomposes by theaction of an acid and produces a carboxyl group. As a result, itincreases solubility of the resin in an alkali developer.

The resin of Component (A) may have, in addition to the aciddecomposable repeating unit represented by the formula (I), another aciddecomposable repeating unit.

An acid decomposable repeating unit other than the acid decomposablerepeating unit represented by the formula (I) is preferably a repeatingunit represented by the following formula (II):

In the formula (II),

Xa₁ represents a hydrogen atom, an alkyl group, a cyano group, or ahalogen atom and is similar to Xa₁ in the formula (I).

Rx₁ to Rx₃ each independently represents an alkyl group or a cycloalkylgroup. At least two of Rx₁ to Rx₃ may be coupled to form a cycloalkylgroup.

As the alkyl group of Rx₁ to Rx₃, linear or branched C₁₋₄ groups such asmethyl group, ethyl group, n-propyl group, isopropyl group, n-butylgroup, isobutyl group, and t-butyl group are preferred.

As the cycloalkyl group of Rx₁ to Rx₃, monocycle cycloalkyl groups suchas cyclopentyl and cyclohexyl and polycyclic cycloalkyl groups such asnorbornyl group, tetracyclodecanyl group, tetracyclododecanyl group, andadamantyl group are preferred.

As the cycloalkyl group formed by coupling of at least two of Rx₁ toRx₃, monocyclic cycloalkyl groups such as cyclopentyl group andcyclohexyl group and polycyclic cycloalkyl groups such as norbornylgroup, tetracyclodecanyl group, tetracyclododecanyl group and adamantylgroup are preferred.

These groups given as Rx₁ to Rx₃ may have a substituent further.Examples of the substituent which they may have include fluorine atom,chlorine atom, bromine atom, hydroxyl group, and cyano group.

As a preferred mode of Rx₁ to Rx₃, Rx₁ represents a methyl group or anethyl group and Rx₂ and Rx₃ are coupled to form the above-describedmonocycle or polycyclic cycloalkyl group.

The following are specific examples of the preferable repeating unithaving an acid decomposable group, but the present invention is notlimited to them.

-   (wherein, Rx represents H, CH₃ or CH₂OH and Rxa and Rxb each    represents a C₁₋₄ alkyl group)

The repeating unit represented by the formula (II) is preferablyRepeating units 1, 2, 10, 11, 12, 13, and 14 in the above specificexamples.

When the acid-decomposable-group-containing repeating unit representedby the formula (I) is used in combination with anotheracid-decomposable-group-containing repeating unit (preferably, therepeating unit represented by the formula (II)), a molar ratio of theacid-decomposable-group-containing repeating unit represented by theformula (I): the another acid-decomposable-group-containing repeatingunit is from 90:10 to 10:90, more preferably from 80:20 to 20:80.

The total content of the acid-decomposable-group-containing repeatingunit in the resin of Component (A) is preferably from 20 to 50 mol %,more preferably from 25 to 45 mol % based on all the repeating units inthe polymer.

The resin of Component (A) preferably has a repeating unit having atleast one group selected from a lactone group, a hydroxyl group, a cyanogroup, and an alkali soluble group.

The resin of Component (A) preferably has a repeating unit having alactone structure.

Although the lactone structure is not limited at all, a 5- to 7-memberedring lactone structure is preferred, with a 5- to 7-membered ringlactone structure cyclocondensed with another cyclic structure to form abicyclo structure or spiro structure is preferred. The resin having arepeating unit having a lactone structure represented by any one of thefollowing formulas (LC1-1) to (LC1-16) is more preferred. The lactonestructure may be bonded directly to the main chain. Preferred lactonestructures include (LC1-1), (LC1-4), (LC1-5), (LC1-6), (LC1-13), and(LC1-14). Use of a specific lactone structure reduces line edgeroughness and development defects.

The lactone structure portion may have a substituent (Rb₂) or may haveno substituent. Preferred examples of the substituent (Rb₂) include C₁₋₈alkyl groups, C₄₋₇ cycloalkyl groups, C₁₋₈ alkoxy groups, C₁₋₈alkoxycarbonyl groups, carboxyl group, halogen atoms, hydroxyl group,cyano group, and acid decomposable groups. More preferred examplesinclude C₁₋₄ alkyl groups, cyano group, and acid decomposable groups. Inthe above formulas, n2 stands for an integer from 0 to 4. When n2 is 2or greater, a plurality of Rb₂s may be the same or different, or theplurality of Rb₂s may be coupled to form a ring.

Examples of the repeating unit having a lactone structure represented byany one of the formulas (LC1-1) to (LC1-16) include repeating unitsrepresented by the following formula (AI):

In the formula (AI),

Rb₀ represents a hydrogen atom, a halogen atom or a C₁₋₄ alkyl group.Preferred examples of the substituent which the alkyl group of Rb₀ mayhave include hydroxyl group and halogen atoms.

Examples of the halogen atom of Rb₀ include fluorine atom, chlorineatom, bromine atom, and iodine atom. Rb₀ is preferably a hydrogen atomor a methyl group.

Ab represents a single bond, an alkylene group, a divalent linking grouphaving a monocyclic or polycyclic alicyclic hydrocarbon structure, anether group, an ester group, a carbonyl group, or a divalent linkinggroup comprising a combination thereof. It is preferably a single bondor a divalent linking group represented by -Ab₁-CO₂—. Ab₁- is a linearor branched alkylene group, or a monocyclic or polycyclic cycloalkylenegroup, preferably a methylene group, an ethylene group, a cyclohexylenegroup, an adamantylene group, or a norbomylene group.

V represents a group having a structure represented by any one offormulas (LC-1) to (LC-16).

The repeating unit having a lactone structure typically has opticalisomers. Any of these optical isomers may be used. The optical isomersmay be used either singly or in combination. When one optical isomer isused mainly, it has preferably an optical impurity (ee) of 90 orgreater, more preferably 95 or greater.

The content of the repeating unit having a lactone structure ispreferably from 15 to 60 mol %, more preferably from 20 to 50 mol %,still more preferably from 30 to 50 mol % based on all the repeatingunits in the polymer.

The following are specific examples of the repeating unit with a lactonestructure, but the present invention is not limited to them.

-   (wherein, Rx represents H, CH₃, CH₂OH, or CF₃)

-   (wherein, Rx represents H, CH₃, CH₂OH, or CF₃)

-   (wherein, Rx represents H, CH₃, CH₂OH, or CF₃)

As the repeating unit having a lactone structure, the followingrepeating units are especially preferred. Selection of the optimumlactone structure improves pattern profile and coarseness/finenessdependence.

-   (wherein, Rx represents H, CH₃, CH₂OH, or CF₃)

The resin of Component (A) preferably has a hydroxyl- orcyano-containing repeating unit. The resin having such a repeating unithas improved adhesion to substrates and affinity for developers. Thehydroxyl- or cyano-containing repeating unit is preferably a repeatingunit with an alicyclic hydrocarbon structure substituted with a hydroxylor cyano group. The alicyclic hydrocarbon structure of the alicyclichydrocarbon structure substituted with a hydroxyl or cyano group ispreferably an adamantyl group, a diamantyl group or a norbomane group.

The preferred alicyclic hydrocarbon structure substituted with ahydroxyl or cyano group is preferably a partial structure represented byany one of the following formulas (VIIa) to (VIId):

In the formulas (VIIa) to (VIIc),

R₂c to R₄c each independently represents a hydrogen atom, a hydroxylgroup, or a cyano group, with the proviso that at least one of R₂c toR₄c represents a hydroxyl group or a cyano group. Preferably, one or twoof R₂c to R₄c is a hydroxyl group and remaining one(s) is a hydrogenatom. More preferably, in the formula (VIIa), two of R₂c to R₄c eachrepresents a hydroxyl group, while the remaining one represents ahydrogen atom.

Examples of the repeating units with partial structures represented bythe formulas (VIIa) to (VIId) include repeating units represented by thefollowing formulas (AIIa) to (AIId), respectively.

In the formulas (AIIa) to (AIId),

R₁c represents a hydrogen atom, a methyl group, a trifluoromethyl group,or a hydroxymethyl group, and

R₂c to R₄c have the same meanings as R₂c to R₄c in the formulas (VIIa)to (VIId).

The content of the repeating unit with an alicyclic hydrocarbonstructure substituted with a hydroxyl or cyano group is preferably from5 to 40 mol %, more preferably from 5 to 30 mol %, still more preferablyfrom 10 to 25 mol % based on all the repeating units in the polymer.

The following are specific examples of the hydroxyl- or cyano-containingrepeating unit, but the present invention is not limited to them.

The resin of Component (A) preferably has a repeating unit with analkali soluble group. Examples of the alkali soluble group includecarboxyl group, sulfonamide group, sulfonylimide group, bissulfonylimidegroup, and aliphatic alcohols (for example, hexafluoroisopropanol group)substituted, at the a position thereof, an electron withdrawing group.The resin having a carboxyl-containing repeating unit is more preferred.When the resin has the repeating unit with an alkali soluble group,resolution at the time of formation of contact holes is enhanced. As therepeating unit with an alkali soluble group, any of repeating unitshaving an alkali soluble group bonded directly to the main chain of theresin such as repeating units by acrylic acid or methacrylic acid,repeating units having an alkali soluble group bonded to the main chainof the resin via a linking group, and repeating units having an alkalisoluble group introduced into the end of the polymer chain at the timeof polymerization by using an alkali-soluble-group-containingpolymerization initiator or chain transfer agent is preferred. Thelinking group may have a monocyclic or polycyclic hydrocarbon structure.The repeating unit by acrylic acid or methacrylic acid is especiallypreferred.

The content of the repeating unit with an alkali soluble group ispreferably from 1 to 20 mol %, more preferably from 3 to 15 mol %, stillmore preferably from 5 to 10 mol % based on the total repeating units inthe polymer.

The following are specific examples of the repeating unit with an alkalisoluble group, but the present invention is not limited to them.

-   (wherein, Rx represents H, CH₃, CF₃, or CH₂OH)

As the repeating unit with at least one group selected from a lactonegroup, a hydroxyl group, a cyano group, and alkali soluble groups,repeating units having at least two groups selected from a lactonegroup, a hydroxyl group, a cyano group, and alkali soluble groups aremore preferred, with repeating units having both a cyano group and alactone group being still more preferred. Repeating units having alactone structure of LCI-4 substituted with a cyano group are especiallypreferred.

The resin of Component (A) may further have a repeating unit having analicyclic hydrocarbon structure and showing no acid decomposability. Byusing the resin having such a repeating unit, release of low molecularcomponents from a resist film to an immersion liquid can be reducedduring immersion exposure. Examples of such a repeating unit include1-adamantyl (meth)acrylate, diamantyl (meth)acrylate, tricyclodecanyl(meth)acrylate and cyclohexyl (meth)acrylate.

The resin of Component (A) may have various repeating structural units,in addition to the above-described repeating structural units, in orderto adjust dry etching resistance, suitability for a standard developer,adhesion to substrates, resist profile, and properties generallyrequired of resist such as resolution, heat resistance and sensitivity.

Examples of such repeating structural units include, but not limited to,repeating units corresponding to the following monomers.

Addition of such a repeating unit enables fine adjustment of theperformance necessary for the resin of Component (A), particularly (1)solubility in a coating solvent, (2) film forming property (glasstransition point), (3) alkali development property, (4) film loss(selection of hydrophilic, hydrophobic or alkali soluble group), (5)adhesion to an unexposed portion of a substrate, (6) dry etchingresistance, and the like.

Examples of such a monomer include compounds having an additionpolymerizable unsaturated bond selected from acrylates, methacrylates,acrylamides, methacrylamides, allyl compounds, vinyl ethers, and vinylesters.

In addition, an addition polymerizable unsaturated compoundcopolymerizable with a monomer corresponding to the above-describedrepeating structural unit may be copolymerized therewith.

In the resin of Component (A), the molar ratio of the repeatingstructural units contained in the resin is determined as needed so as tocontrol the dry etching resistance, suitability for standard developer,adhesion to substrate, and resist profile of the resist, andperformances generally required of the resist, such as resolution, heatresistance and sensitivity.

When the positive photosensitive composition of the present invention isfor used in ArF exposure, the resin of Component (A) is preferably freeof an aromatic group from the viewpoint of transparency to ArF light.

As the resin of Component (A), resins whose repeating units are composedonly of (meth)acrylate repeating units are preferred. In this case, anyof resins whose repeating units are all methacrylate repeating units,resins whose repeating units are all acrylate repeating units, andresins whose repeating units are composed only of methacrylate repeatingunits and acrylate repeating units is usable. It is preferred that theresin contains acrylate repeating units in an amount of 50 mol % or lessbased on all the repeating units, and is more preferred that the resinis a copolymer containing from 20 to 50 mol % of (meth)acrylaterepeating units having an acid decomposable group, from 20 to 50 mol %of (meth)acrylate repeating units having a lactone structure, from 5 to30 mol % of (meth)acrylate repeating units having an alicyclichydrocarbon structure substituted with a hydroxyl or cyano group, andfrom 0 to 20 mol % of other (meth)acrylate repeating units.

The resin of Component (A) can be synthesized by the conventionalprocess (for example, radical polymerization). Examples of the commonsynthesis process include simultaneous polymerization process ofdissolving monomer species and an initiator in a solvent and heating theresulting solution; and dropwise addition polymerization process ofadding a solution of monomer species and an initiator dropwise to aheated solvent over from 1 to 10 hours. Of these, the dropwise additionpolymerization is preferred. Examples of the reaction solvent includeethers such as tetrahydrofuran, 1,4-dioxane and diisopropyl ether,ketones such as methyl ethyl ketone and methyl isobutyl ketone, estersolvent such as ethyl acetate, amide solvents such as dimethylformamideand dimethylacetamide, and solvents, which will be described later, fordissolving the composition of the invention therein such as propyleneglycol monomethyl ether acetate, propylene glycol monomethyl ether andcyclohexanone. Polymerization using the same solvents as those used forthe positive photosensitive composition of the invention is morepreferred. This makes it possible to inhibit generation of particlesduring storage.

The polymerization reaction is performed preferably in an inert gasatmosphere such as nitrogen or argon. Polymerization is started using,as a polymerization initiator, a commercially available radicalinitiator (such as azo initiator or peroxide). As the radical initiator,azo initiators are preferred, with azo initiators having an ester group,a cyano group or a carboxyl group being more preferred. Preferredexamples of the initiator include azobisisobutyronitrile,azobidimethylvaleronitrile and dimethyl 2,2′-azobis(2-methylpropionate).If desired, the initiator may be added further or added in portions.After completion of the reaction, the reaction mixture is charged in asolvent and the desired polymer is collected, for example, by a methodemployed for collecting powders or solids. The reaction concentration isfrom 5 to 50 mass %, preferably from 10 to 30 mass %. The reactiontemperature is typically from 10 to 150° C., preferably from 30 to 120°C., more preferably from 60 to 100° C.

The resin of Component (A) has a weight average molecular weight ofpreferably from 1,000 to 200,000, more preferably from 3,000 to 20,000,most preferably from 5,000 to 15,000 as determined by GPC relative topolystyrene. Adjustment of the weight average molecular weight to from1,000 to 200,000 makes it possible to prevent deterioration of heatresistance or dry etching resistance and at the same time preventdeterioration of developability and deterioration of film formingproperty which will otherwise occur due to thickening.

Dispersity (molecular weight distribution) is typically from 1 to 5,preferably from 1 to 3, more preferably from 1 to 2. When the molecularweight distribution is smaller, resolution and resist shape areexcellent, the resist pattern has smooth side walls and the roughnessproperty is excellent.

When the resin of Component (A) is used for a positive photosensitivecomposition to be exposed to KrF excimer laser light, electron beam,X-ray or high energy beam (such as EUV) having a wavelength of 50 nm orless, the resin of Component (A) has preferably a repeating unitrepresented by the formula (I) and a repeating unit having ahydroxystyrene structure. Examples of the repeating unit having ahydroxystyrene include o-, m- and p-hydroxystyrene and/or hydroxystyreneprotected with an acid decomposable group. As the hydroxystyrenerepeating unit protected with an acid decomposable group,1-alkoxyethoxystyrene and t-butylcarbonyloxystyrene are preferred.

The resin may have, in addition to the repeating unit represented by theformula (I) and the repeating unit having a hydroxystyrene structure, arepeating unit represented by the formula (II).

Specific examples of the resin to be used in the invention and havingboth the repeating unit having a hydroxystyrene structure and therepeating unit represented by the formula (I) will next be shown, butthe present invention is not limited to them. In these specificexamples, Xa₁ represents a hydrogen atom, an alkyl group, a cyano groupor a halogen atom.

The amount of the resin of Component (A) is preferably from 50 to 99.9mass %, more preferably from 60 to 99.0 mass % in the total solids ofthe positive photosensitive composition of the invention.

In the invention, the resins of Component (A) may be used either singlyor in combination.

(B) Compound Which Generates an Acid Upon Irradiation with Actinic Lightor Radiation

The positive photosensitive composition of the invention contains acompound (which may be called “acid generator” or “compound of Component(B)”) which generates an acid upon irradiation with actinic light orradiation.

Examples of the compound which decomposes to generate an acid uponirradiation with actinic light or radiation include diazonium salts,phosphonium salts, sulfonium salts, iodonium salts, imidosulfonate,oxime sulfonate and o-nitrobenzyl sulfonate.

In addition, compounds obtained by introducing into the polymer mainchain or side chain thereof; these groups or compounds which generate anacid upon irradiation with actinic light or radiation, for example,compounds described in U.S. Pat. No. 3,849,137, German Patent 3914407,JP-A-63-26653, JP-A-55-164824, JP-A-62-69263, JP-A-63-146038,JP-A-63-163452, JP-A-62-153853 and JP-A-63-146029 are also usable.

Further, compounds described, for example, in U.S. Pat. No. 3,779,778and European Patent 126,712 and generating an acid upon irradiation withlight are also usable.

As the acid generator, those having a non-nucleophilic anion arepreferred. Preferred examples include sulfonate anion, carboxylateanion, bis(alkylsulfonyl)amide anion, tris(alkylsulfonyl)methide anion,BF₄ ⁻, PF₆ ⁻ and SbF₆ ⁻. Of these, organic anions having a carbon atomare preferred.

Preferred examples of the non-nucleophilic anion include organic anionsrepresented by the following formulas AN1 to AN4.

Rc₁ represents an organic group.

Examples of the organic groups as Rc₁ include C₁₋₃₀ groups. Preferredexamples include alkyl groups which may be substituted and aryl groupswhich may be substituted, and a plurality of these groups linked via alinking group such as single bond, —O—, —CO₂—, —S—, —SO₃—, or —SO₂N(Rd₁).

Rd₁ represents a hydrogen atom or an alkyl group, or may form a ringstructure with the alkyl group or aryl group to which Rd₁ is bonded.

As the organic group of Rc₁, alkyl groups substituted, at the 1-positionthereof, with a fluorine atom or a fluoroalkyl group and a phenyl groupsubstituted with a fluorine atom or fluoroalkyl group are preferred.Having a fluorine atom or fluoroalkyl group leads to a rise in theacidity of an acid generated by exposure to light, and improvement insensitivity. When Rc₁ has 5 or more carbon atoms, at least one of thecarbon atoms is preferably substituted with a hydrogen atom. Morepreferably, the number of hydrogen atoms is greater than that offluorine atoms. An acid generator not containing a perfluoroalkyl grouphaving 5 or greater carbon atoms has reduced ecotoxicity.

It is also preferred that Rc₁ is a group represented by the followingformula.

Rc₇-Ax-Rc₆

Rc₆ represents a perfluoroalkylene group or a phenylene groupsubstituted with from 3 to 5 fluorine atoms and/or from 1 to 3fluoroalkyl groups.

Ax represents a linking group (preferably, a single bond, —O—, —CO₂—,—S—, —SO₃—, or SO₂N(Rd₁)— in which Rd₁ represents a hydrogen atom or analkyl group, or may be coupled with Rc₇ to form a ring structure).

Rc₇ represents a hydrogen atom, a fluorine atom, a linear, branched,monocyclic or polycyclic alkyl group which may be substituted, or anaryl group which may be substituted. The alkyl group or aryl group whichmay be substituted preferably does not contain a fluorine atom as thesubstituent.

Rc₃, Rc₄ and Rc₅ each represents an organic group.

The organic groups of Rc₃, Rc₄ and Rc₅ are preferably organic groupssimilar to those given as preferred examples of the organic group ofRc₁.

Rc₃ and Rc₄ may be coupled to form a ring. Examples of the group formedby the coupling of Rc₃ and Rc₄ include alkylene groups and arylenegroups, with a C₂₋₄ perfluoroalkylene group is preferred. Coupling ofRc₃ and Rc₄ to form a ring is preferred because it raises the acidity ofan acid generated by exposure to light and improves the sensitivity.

As the acid generator to be used in the invention, compounds whichgenerate an acid represented by the formula (BIl) are preferred.

wherein, in the formula (BII),

Rb₁ represents a group having an electron withdrawing group,

Rb₂ represents an organic group having no electron withdrawing group,

m and n each stands for an integer from 0 to 5, with the proviso thatm+n≦5,

when m stands for 2 or greater, a plurality of Rb₁ may be the same ordifferent and

when n stands for 2 or greater, a plurality of Rb₁ may be the same ordifferent.

In the formula, m stands for preferably an integer from 1 to 5, morepreferably an integer from 2 to 5. Presence of the electron withdrawinggroup raises the acidity of an acid generated by exposure to actiniclight and improves the sensitivity.

The group, as Rb₁, having an electron withdrawing group is a grouphaving at least one electron withdrawing group and is preferably a groupwith 10 or less carbon atoms. The group having an electron withdrawinggroup may be an electron withdrawing group itself.

The electron withdrawing group is preferably a fluorine atom, afluoroalkyl group, a nitro group, an ester group or a cyano group, morepreferably a fluorine atom.

The organic group, as Rb₂, having no electron withdrawing group ispreferably a C₁₋₂₀, more preferably C₄₋₂₀, still more preferably C₄₋₁₅organic group. Preferred examples of the organic group include alkylgroups, alkoxy groups, alkylthio groups, acyl groups, acyloxy groups,acylamino groups, alkylsulfonyloxy groups, and alkylsulfonylaminogroups. The organic group may have, in the alkyl chain thereof, ahetero-atom-containing linking group. Preferred examples of thehetero-atom-containing linking group include —C(═O)O—, —C(═O)—, —SO₂—,—SO₃ —, —SO₂N(A2)-, —O— and —S—. Two or more of these groups may be usedin combination. In the above formula, A2 is a hydrogen atom or an alkylgroup which may be substituted. When two or more groups are used incombination, they are preferably combined via a heteroatom-free linkinggroup such as alkylene group or arylene group.

These groups may have another substituent. Preferred examples of theanother substituent include hydroxyl group, carboxyl group, sulfo groupand formyl group.

In the formula (BII), it is preferred that m stands for an integer from1 to 5, n stands for an integer from 1 to 5, m+n≦5, and Rb₁ and Rb₂ eachhas a C₄₋₂₀ alkyl structure. Having a C₄₋₂₀ alkyl structure enablessuppression of diffusivity of an acid generated by exposure to actiniclight and improvement of exposure latitude.

In the formula (BII), Rb₁ and Rb₂ each has preferably an alicyclicgroup. In particular, the organic group of Rb₂ having no electronwithdrawing group is preferably a group having an alicyclic group.

The following are specific examples of the acid represented by theformula (BII).

Examples of the compound which generates an acid represented by theformula (BII) in irradiation with actinic light or radiation includediazonium salts, phosphonium salts, sulfonium salts, iodonium salts,imidosulfonate, oxime sulfonate and o-nitrobenzyl sulfonate.

Of the compounds which decompose and generate an acid upon irradiationwith actinic light or radiation, compounds represented by the followingformulas (ZIa) and (ZIIa) are preferred.

In the formula (ZIa), R₂₀₁, R₂₀₂, and R₂₀₃ each independently has anorganic group.

Xd⁻ represents an anion of the acid represented by the formula (BII).

Specific examples of the organic group as R₂₀₁, R₂₀₂, and R₂₀₃ includegroups corresponding to Compounds (ZI-1a), (ZI-2a) and (ZI-3a) whichwill be described later.

The organic group may be a compound having a plurality of structuresrepresented by formula (ZIa). For example, the compound may have astructure such that at least one of R₂₀₁ to R₂₀₃ of a compoundrepresented by the formula (ZIa) is bonded to at least one of R₂₀₁ toR₂₀₃ of another compound represented by the formula (ZIa).

Compounds (ZI-1a), (ZI-2a) and (ZI-3a) described below can be given asmore preferred examples of Component (ZIa).

Compound (ZI-1a) is an arylsulfonium compound having an aryl group as atleast one of R₂₀₁ to R₂₀₃ in the formula (ZIa), that is, a compoundhaving an arylsulfonium as a cation.

In the arylsulfonium compound, all of R₂₀₁ to R₂₀₃ may be an aryl groupor some of R₂₀₁ to R₂₀₃ may be an aryl group with the remaining being analkyl group.

Examples of the arylsulfonium compound include triarylsulfoniumcompounds, diarylalkylsulfonium compounds, and aryldialkylsulfoniumcompounds.

The aryl group of the arylsulfonium compound is preferably an aryl groupsuch as phenyl group or naphthyl group, or a heteroaryl group such asindole residue or pyrrole residue, more preferably a phenyl group orindole residue. When the arylsulfonium compound has two or more arylgroups, these two or more aryl groups may be the same of different.

The alkyl group which the arylsulfonium compound has if necessary ispreferably a linear, branched or cyclic C₁₋₁₅ alkyl group and examplesthereof include methyl group, ethyl group, propyl group, n-butyl group,sec-butyl group, t-butyl group, cyclopropyl group, cyclobutyl group andcyclohexyl group.

The aryl group or alkyl group of R₂₀₁ to R₂₀₃ may have, as thesubstituent, an alkyl group (for example, C₁₋₁₅ alkyl group), an arylgroup (for example, C₆₋₁₄ aryl group), alkoxy group (for example, aC₁₋₁₅ alkoxy group), a halogen atom, a hydroxyl group, or a phenylthiogroup. The substituent is preferably a linear, branched or cyclic C₁₋₁₂alkyl group or a linear, branched or cyclic C₁₋₁₂ alkoxy group, mostpreferably a C₁₋₄ alkyl group or a C₁₋₄ alkoxy group. The substituentmay be substituted to any one of three R₂₀₁ to R₂₀₃ or may besubstituted to all of them. When R₂₀₁ to R₂₀₃ each represents an arylgroup, the substituent is preferably substituted at the p-position ofthe aryl group.

Preferred examples of the arylsulfonium cation includetriphenylsulfonium cation which may be substituted,naphthyltetrahydrothiophenium cation which may be substituted andphenyltetrahydrothiophenium cation which may be substituted.

Compound (ZI-2a) will be described next.

Compound (ZI-2a) is a compound of the formula (ZIa) in which R₂₀₁ toR₂₀₃ in formula (ZIa) each independently represents an organic groupcontaining no aromatic ring. The term “aromatic ring” as used hereinembraces even an aromatic ring containing a heteroatom.

The organic group, as R₂₀₁ to R₂₀₃, containing no aromatic ring hastypically from 1 to 30 carbon atoms, preferably from 1 to 20 carbonatoms.

R₂₀₁ to R₂₀₃ each independently and preferably represents an alkylgroup, a 2-oxoalkyl group, an alkoxycarbonylmethyl group, an allylgroup, or a vinyl group, more preferably a linear, branched or cyclic2-oxoalkyl group or an alkoxycarbonylmethyl group, most preferably alinear or branched 2-oxoalkyl group.

The alkyl group as R₂₀₁ to R₂₀₃ may be any of linear, branched or cyclicand is preferably a linear or branched C₁₋₁₀ alkyl group (such as methylgroup, ethyl group, propyl group, butyl group or pentyl group) or acyclic C₃₋₁₀ alkyl group (such as cyclopentyl group, cyclohexyl group ornorbomyl group).

The 2-oxoalkyl group as R₂₀₁ to R₂₀₃ may be any of linear, branched orcyclic and is preferably a group having >C═O at the 2-position of thealkyl group.

The alkoxy group of the alkoxycarbonylmethyl group as R₂₀₁ to R₂₀₃ ispreferably a C₁₋₅ alkoxy group (such as methoxy group, ethoxy group,propoxy group, butoxy group or pentoxy group).

R₂₀₁ to R₂₀₃ may be substituted further with a halogen atom, an alkoxygroup (for example, a C₁₋₅ alkoxy group), a hydroxyl group, a cyanogroup or a nitro group.

Two of R₂₀₁ to R₂₀₃ may be coupled to form a ring structure, and thering may contain therein an oxygen atom, a sulfur atom, an ester bond,an amide bond or a carbonyl group. Examples of the group formed bycoupling of two of R₂₀₁ to R₂₀₃ include alkylene groups (such asbutylene group and pentylene group).

Compound (ZI-3) is a compound represented by the following formula(ZI-3a) and having a phenacylsulfonium salt structure.

R_(1c) to R_(5c) each independently represents a hydrogen atom, an alkylgroup, an alkoxy group, or a halogen atom.

R_(6c) and R_(7c) each represents a hydrogen atom or an alkyl group.

R_(x) and R_(y) each independently represents an alkyl group, a2-oxoalkyl group, an alkoxycarbonylmethyl group, an allyl group, or avinyl group.

At least any two of R_(1c) to R_(5c), or R_(x) and R_(y) may be coupledto form a ring structure and the ring structure may contain an oxygenatom, a sulfur atom, an ester bond or an amide bond.

Xd⁻ represents an anion of an acid represented by the formula (BII).

The alkyl group as R_(1c) to R_(5c) may be any of linear, branched orcyclic alkyl groups, for example, C₁₋₂₀ alkyl groups. Preferred examplesthereof include linear or branched C₁₋₁₂ alkyl groups (such as methylgroup, ethyl group, linear or branched propyl group, linear or branchedbutyl group, and linear or branched pentyl group) and cyclic C₃₋₈ alkylgroups (such as cyclopentyl group and cyclohexyl group).

The alkoxy group as R_(1c) to R_(5c) may be any of linear, branched orcyclic alkoxy groups, for example, C₁₋₁₀ alkoxy groups. Preferredexamples include linear or branched C₁₋₅ alkoxy groups (such as methoxygroup, ethoxy group, linear or branched propoxy group, linear orbranched butoxy group, and linear or branched pentoxy group) and cyclicC₃₋₈ alkoxy groups (such as cyclopentyloxy group and cyclohexyloxygroup).

Preferably, any one of R_(1c) to R_(5c) is a linear, branched, or cyclicalkyl group or a linear, branched, or cyclic alkoxy group. Morepreferably, the sum of carbon atoms of from R_(1c) to R_(5c) is from 2to 15. This enables improvement of solubility in a solvent andprevention of generation of particles during storage.

Examples of the alkyl group as R_(x) and R_(y) are similar to those ofthe alkyl group as R_(1c) to R_(5c.)

Examples of the 2-oxoalkyl group include the alkyl groups which aregiven as R_(1c) to R_(5c) and have >C═O at the 2-position thereof.

Examples of the alkoxy group of the alkoxycarbonylmethyl group aresimilar to those of the alkoxy group as R_(1c) to R_(5c).

Examples of the group formed by coupling of R_(x) and R_(y) includebutylene group and pentylene group.

R_(x) and R_(y) are each preferably an alkyl group having 4 or morecarbon atoms, more preferably 6 or more carbon atoms, still morepreferably 8 or more carbon atoms.

In formula (ZIIa), R204 and R₂₀₅ each independently represents an arylgroup which may be substituted or an alkyl group which may besubstituted.

The aryl group of R₂₀₄ or R₂₀₅ is preferably a phenyl group or anaphthyl group, more preferably a phenyl group.

The alkyl group as R₂₀₄ or R₂₀₅ is preferably any of linear, branched orcyclic alkyl groups. Preferred examples include linear or branched C₁₋₁₀alkyl groups (such as methyl group, ethyl group, propyl group, butylgroup, and pentyl group) and cyclic C₃₋₁₀ alkyl groups (such ascyclopentyl group, cyclohexyl group, and norbomyl group).

Examples of the substituent which R₂₀₄ or R₂₀₅ may have include alkylgroups (such as C₁₋₁₅ alkyl groups), aryl groups (such as C₆₋₁₅ arylgroups), alkoxy groups (such as C₁₋₁₅ alkoxy groups), halogen atoms,hydroxyl group and phenylthio group.

Further preferred examples of the compounds which decompose and generatean acid upon irradiation with actinic light or radiation includecompounds represented by the following formulas (ZIIIa) and (ZIVa).

In the formulas (ZIIIa) and (ZIVa),

Xd represents a monovalent group obtained by removal of a hydrogen atomfrom the acid represented by the formula (BII).

R₂₀₇ and R₂₀₈ each represents a substituted or unsubstituted alkylgroup, a substituted or unsubstituted aryl group, or an electronwithdrawing group. R₂₀₇ is preferably a substituted or unsubstitutedaryl group.

R₂₀₈ is preferably an electron withdrawing group, more preferably acyano group or fluoroalkyl group.

A represents a substituted or unsubstituted alkylene group, asubstituted or unsubstituted alkenylene group, or a substituted orunsubstituted arylene group.

Of the compounds which decompose and generate an acid upon irradiationwith actinic light or radiation, compounds represented by the formulas(ZIa) to (ZIIIa) are more preferred, of which compounds represented bythe formula (ZIa) are still more preferred and compounds represented bythe formulas (ZI-1a) to (ZI-3a) are most preferred.

Especially preferred examples of Component (B) will next be shown, butthe present invention is not limited to them.

Examples of another preferred acid generator include, but not limitedto, following compounds.

The compounds as Component (B) may be used either singly or incombination. When two or more of them are used in combination, it ispreferred to use compounds differing in the total number of atomsexcluding hydrogen atoms by 2 or more and generating two organic acids.

The content of the compound as Component (B) in the composition ispreferably from 0.1 to 20 mass %, more preferably from 1 to 10 mass %,still more preferably from 3 to 8 mass %, especially preferably from 4to 7 mass %, based on the total solid content of the resist composition.

(C) Fluorine- and/or Silicon-Containing Resin

The resist composition of the invention contains a resin (C) (which maybe called Resin (C)) containing a fluorine atom and/or silicon atom anda group selected from the class consisting of the following groups (x)to (z):

(x) an alkali soluble group,

(y) a group which decomposes by the action of an alkali developer andhas an increased solubility in the alkali developer, and

(z) a group which decomposes by the action of an acid.

Examples of the alkali soluble group (x) include groups having aphenolic hydroxyl group, a carboxylic acid group, a fluorinated alcoholgroup, a sulfonic acid group, a sulfonamide group, a sulfonylimidegroup, an (alkylsulfonyl)(alkylcarbonyl)methylene group, an(alkylsulfonyl)(alkylcarbonyl)imide group, a bis(alkylcarbonyl)methylenegroup, a bis(alkylcarbonyl)imide group, a bis(alkylsulfonyl)methylenegroup, a bis(alkylsulfonyl)imide group, a tris(alkylcarbonyl)methylenegroup, and a tris(alkylsulfonyl)methylene group.

Of these alkali soluble groups, fluorinated alcohol (preferably,hexafluoroisopropanol), sulfonimide, and bis(carbonyl)methylene groupsare preferred.

As the repeating unit with the alkali soluble group (x), any ofrepeating units having the alkali soluble group bonded directly to themain chain of the resin, such as repeating units by acrylic acid ormethacrylic acid, repeating units having the alkali soluble group bondedto the main chain of the resin via a linking group, and repeating unitshaving the alkali soluble group introduced into the end of the polymerchain at the time of polymerization by using analkali-soluble-group-containing polymerization initiator or chaintransfer agent is preferred.

The content of the repeating unit with the alkali soluble group (x) ispreferably from 1 to 50 mol %, more preferably from 3 to 35 mol %, stillmore preferably from 5 to 20 mol % based on the total repeating units inthe polymer.

The following are specific examples of the repeating unit with thealkali soluble group (x). In the following formulas, Rx represents H,CH₃, CF₃ or CH₂OH.

Examples of the group (y) which decomposes by the action of an alkalideveloper and has an increased solubility in the alkali developerinclude groups having a lactone structure, acid anhydrides and acidimide groups, of which the lactone group is preferred.

As a repeating unit having the group (y) which decomposes by the actionof an alkali developer and has an increased solubility in the alkalideveloper, repeating units having an alkali soluble group bonded to themain chain of the resin via a linking group such as repeating unit byacrylate or methacrylate, and repeating units having an alkali solublegroup introduced into the end of the polymer chain at the time ofpolymerization by using a polymerization initiator or chain transferagent having the group (y) having an increased solubility in an alkalideveloper are preferred.

The content of the repeating unit with the group (y) having an increasedsolubility in an alkali developer is preferably from 1 to 40 mol %, morepreferably from 3 to 30 mol %, still more preferably from 5 to 15 mol %based on the total repeating units in the polymer.

Specific examples of the repeating unit having the group (y) having anincreased solubility in an alkali developer include the lactonestructures as described in Resin (A) and the structure represented bythe following formula (VIII):

In the formula (VIII),

Z₂ represents —O— or —N(R₄₁)—. R₄₁ represents a hydrogen atom, ahydroxyl group, an alkyl group, or —OSO₂—R₄₂. R₄₂ represents an alkylgroup, a cycloalkyl group, or a camphor residue. The alkyl grouprepresented by R₄₁ or R₄₂ may be substituted by a halogen atom(preferably fluorine atom) or the like.

The following are specific examples of the repeating units representedby the formula (VIII), but the invention is not limited to or by theseexamples.

The group (z) which decomposes by the action of an acid (aciddecomposable group) is preferably a group obtained by substituting thehydrogen atom of an alkali soluble group, such as —COOH or —OH, with agroup which is eliminated with an acid.

Examples of the group which is elminted with an acid include—C(R₃₆)(R₃₇)(R₃₈), —C(R₃₆)(R₃₇)(OR₃₉) and —C(R₀₁)(R₀₂)(OR₃₉).

In the formulas, R₃₆ to R₃₉ each independently represent an alkyl group,a cycloalkyl group, an aryl group, an aralkyl group, or an alkenylgroup. R₃₆ and R₃₇ and R₃₆ and R₃₉ may be coupled together to form aring.

R₀₁ and R₀₂ each independently represents a hydrogen atom, an alkylgroup, a cycloalkyl group, an aryl group, an aralkyl group or an alkenylgroup.

In the invention, the acid decomposable group is preferably an acetalgroup or a tertiary ester group.

In Resin (C), the content of the repeating unit having the group (z)which decomposes by the action of an acid is preferably from 1 to 80 mol%, more preferably from 10 to 80 mol %, still more preferably from 20 to60 mol %, based on the total repeating units in the polymer.

Inclusion of Resin (C) in the resist composition of the invention canimprove the followability of the immersion liquid, because Resin (C) islocated eccentrically on the surface layer of the photosensitive filmand improves a receding contact angle of the surface of thephotosensitive film with water when water is used as an immersionmedium. As Resin (C), any resin capable of improving the recedingcontact angle of the surface is usable, but preferably is a resin havingat least either one of a fluorine atom and a silicon atom. The recedingcontact angle of the photosensitive film is preferably from 60° to 90°,more preferably 70° or greater.

Resin (C) may be added while adjusting as needed the receding contactangle of the photosensitive film to fall within the above-describedrange. It is preferably from 0.1 to 10 mass %, more preferably from 0.1to 5 mass % based on the total solid content of the photosensitivecomposition.

The term “receding contact angle” as defined herein means a recedingcontact angle measured by the extension/contraction method. Morespecifically, it can be measured using a full automatic contact anglemeter (“DM700”, trade name; product of Kyowa Interface Science). Afterformation of 36 μl of a droplet by a syringe on a positive resistcomposition prepared on a silicon wafer, the droplet is sucked at a rateof 6 μL/sec. The contact angle which becomes stable during the suctionis taken as the receding contact angle.

Resin (C) is located eccentrically on the interface as described above,but different from the surfactant, it does not necessarily have ahydrophilic group in the molecule and contribute to uniform mixing of apolar/nonpolar substance.

Resin (C) has preferably a repeating unit with a lactone group.

Resin (C) is preferably an alkali soluble resin containing afluorine-containing C₁₋₄ alkyl group, a fluorine-containing cycloalkylgroup or a fluorine-containing aryl group.

It is preferred that Resin (C) has an alcoholic hydroxyl group and thealcohol moiety of the alcoholic hydroxyl group is fluorinated alcohol.

Resin (C) is preferably a resin having an increased solubility in analkali developer by the action of an alkali developer and/or an acid.

Resin (C) is preferably a solid at 25° C.

Resin (C) has a glass transition point preferably within a range of from50 to 200° C.

Resin (C) is preferably at least either one of (C1) a resin having atleast either one of a fluorine atom and a silicon atom and an alicyclicstructure and (C2) a resin containing a repeating unit having, on theside chain thereof, at least either one of a fluorine atom and a siliconatom and a repeating unit having, on the side chain thereof, anunsubstituted alkyl group.

Resin (C) is preferably a hydrophobic resin (HR). The hydrophobic resin(HR) can be used suitably also as a top coat.

The resin (HR) may have a fluorine atom or a silicon atom in the mainchain of the resin or the fluorine or silicon atom may be substituted tothe side chain.

The resin (HR) is preferably a resin having, as a fluorine-containingpartial structure, a fluorine-containing alkyl group, afluorine-containing cycloalkyl group, or a fluorine-containing arylgroup.

The fluorine-containing alkyl group (preferably, C₁₋₁₀, more preferablyC₁₋₄ alkyl group) is a linear or branched alkyl group, at least onehydrogen atom of which has been substituted with a fluorine atom. It mayhave another substituent further.

The fluorine-containing cycloalkyl group is a monocyclic or polycycliccycloalkyl group, at least one hydrogen atom of which has beensubstituted with a fluorine atom. It may have another substituentfurther.

The fluorine-containing aryl group is an aryl group, such as phenylgroup or naphthyl group, at least one hydrogen atom of which has beensubstituted with a fluorine atom. It may have another substituentfurther.

The formulas of the fluorine-containing alkyl group, fluorine-containingcycloalkyl group and fluorine-containing aryl group are shown below, butthe present invention is not limited to them.

In the formulas (F2) to (F4),

R₅₇ to R₆₈ each independently represents a hydrogen atom, a fluorineatom, or an alkyl group with the proviso that at least one of R₅₇ toR₆₁, at least one of R₆₂ to R₆₄, and at least one of R₆₆ to R₆₈ eachrepresent a fluorine atom or an alkyl group (preferably, C₁₋₄ allylgroup) at least one hydrogen atom of which has been substituted with afluorine atom. It is preferred that all of R₅₇ to R₆₁ and R₆₅ to R₆₇ arefluorine atoms. R₆₂, R₆₃, and R₆₈ each is preferably an alkyl group(preferably C₁₋₄ alkyl group) at least one hydrogen atom of which hasbeen substituted with a fluorine atom, more preferably a C₁₋₄perfluoroalkyl group. R₆₂ and R₆₃ may be coupled together to form aring.

Specific examples of the group represented by the formula (F2) includep-fluorophenyl group, pentafluorophenyl group and3,5-di(trifluoromethyl)phenyl group.

Specific examples of the group represented by the formula (F3) includetrifluoromethyl group, pentafluoropropyl group, pentafluoroethyl group,heptafluorobutyl group, hexafluoroisopropyl group, heptafluoroisopropylgroup, hexafluoro(2-methyl)isopropyl group, nonafluorobutyl group,octafluoroisobutyl group, nonafluorohexyl group , nonafluoro-t-butylgroup, perfluoroisopentyl group, perfluorooctyl group,perfluoro(trimethyl)hexyl group, 2,2,3,3-tetrafluorocyclobutyl group,and perfluorocyclohexyl group. Of these, hexafluoroisopropyl group,heptafluoroisopropyl group, hexafluoro(2-methyl)isopropyl group,octafluoroisobutyl group, nonafluoro-t-butyl group, andperfluoroisopentyl group are preferred, with hexafluoroisopropyl groupand heptafluoroisopropyl group being more preferred.

Specific examples of the group represented by the formula (F4) include—C(CF₃)₂OH, —C(C₂F₅)₂OH, —C(CF₃)(CH₃)OH, and —CH(CF₃)OH, with —C(CF₃)₂OHbeing preferred.

The following are specific examples of the repeating units containinggroups represented by the formulas (F2) to (F4). In the formulas, X₁represents a hydrogen atom, —CH₃, —F, or —CF₃. X₂ represents —F or —CF₃.

The resin (HR) is also preferably a resin having, as asilicon-containing partial structure, an alkylsilyl structure(preferably, trialkylsilyl group) or a cyclic siloxane structure.

Specific examples of the alkylsilyl structure or cyclic siloxanestructure include groups represented by the following formulas (CS-1) to(CS-3):

In the formulas (CS-1) to (CS-3),

R₁₂ to R₂₆ each independently represents a linear or branched alkylgroup (preferably C₁₋₂₀ alkyl group) or a cycloalkyl group (preferably,C₃₋₂₀ cycloalkyl group).

L₃ to L₅ each represents a single bond or a divalent linking group.Examples of the divalent linking group include groups selected from theclass consisting of alkylene groups, phenyl group, ether group,thioether group, carbonyl group, ester group, amide group, urethanegroup, and urea group, and two or more of these groups used incombination.

n represents an integer of from 1 to 5.

The following are specific examples. In the formulas, X₁ represents ahydrogen atom, —CH₃; —F, or —CF₃.

The resin (HR) may have a repeating unit represented by the followingformula (III) further.

In the formula (III),

R₄ represents a group having an alkyl group, a cycloalkyl group, analkenyl group or a cycloalkenyl group, and

L₆ represents a single bond or a divalent linking group.

The alkyl group of R₄ in the formula (III) is preferably a linear orbranched C₃₋₂₀ alkyl group.

The cycloalkyl group is preferably a C₃₋₂₀ cycloalkyl group.

The alkenyl group is preferably a C₃₋₂₀ alkenyl group.

The divalent linking group of L₆ is preferably an alkylene group(preferably, C₁₋₅ alkylene group) or an oxo group.

When the resin (HR) has a fluorine atom, the content of the fluorineatom is preferably from 5 to 80 wt. %, more preferably from 10 to 80mass % based on the molecular weight of the resin (HR). The content ofthe fluorine-containing repeating unit in the resin (HR) is preferablyfrom 10 to 100 mass %, more preferably from 30 to 100 mass %.

When the resin (HR) has a silicon atom, the content of the silicon atomis preferably from 5 to 80 mass %, more preferably from 10 to 80 mass %based on the molecular weight of the resin (HR). The silicon-containingrepeating unit is preferably from 10 to 100 mass %, more preferably from30 to 100 mass % in the resin (HR).

The resin (HR) has preferably a weight average molecular weight,relative to polystyrene standards, of preferably from 1,000 to 100,000,more preferably from 1,000 to 50,000, still more preferably from 2,000to 15,000.

Of course, the resin (HR) has, similar to the acid decomposable resin(A), a content of impurities such as metals as small as possible and atthe same time, it contains a residual monomer or oligomer component inan amount of from 0 to 10 mass %, more preferably from 0 to 5 mass %,still more preferably from 0 to 1 mass %. Such a resin can provide aresist not undergoing a time-dependent change in foreign matters in theliquid or sensitivity. From the viewpoints of resolution, resistprofile, side walls of a resist pattern, and roughness, it has amolecular weight distribution (Mw/Mn, which is also called “dispersity”)falling within a range preferably from 1 to 5, more preferably from 1 to3, still more preferably from 1 to 2.

As the resin (HR), commercially available products can be used or theresin can be synthesized in a conventional manner (for example, radicalpolymerization). Examples of the common synthesis process includesimultaneous polymerization process of dissolving monomer species and aninitiator in a solvent and heating the resulting solution; and dropwiseaddition polymerization process of adding a solution of monomer speciesand an initiator dropwise to a heated solvent over from 1 to 10 hours.Of these, the dropwise addition polymerization is preferred. Examples ofthe reaction solvent include ethers such as tetrahydrofuran, 1,4-dioxaneand diisopropyl ether, ketones such as methyl ethyl ketone and methylisobutyl ketone, ester solvent such as ethyl acetate, amide solventssuch as dimethylformamide and dimethylacetamide, and solvents, whichwill be described later, for dissolving the composition of the inventiontherein such as propylene glycol monomethyl ether acetate, propyleneglycol monomethyl ether and cyclohexanone. Polymerization using the samesolvents as those used for the positive resist composition of theinvention is more preferred. This makes it possible to inhibitgeneration of particles during storage.

The polymerization reaction is performed preferably in an inert gasatmosphere such as nitrogen or argon. Polymerization is started using acommercially available radical initiator (such as azo initiator orperoxide) as the polymerization initiator. As the radical initiator, azoinitiators are preferred, with azo initiators having an ester group, acyano group or a carboxyl group being more preferred. Preferred examplesof the initiator include azobisisobutyronitrile,azobisdimethylvaleronitrile and dimethyl2,2′-azobis(2-methylpropionate). The concentration of the reaction isfrom 5 to 50 mass %, preferably from 30 to 50 mass %. The reactiontemperature is typically from 10 to 150° C., preferably from 30 to 120°C., still more preferably from 60 to 100° C.,

After completion of the reaction, the reaction product is allowed tocool to room temperature and is purified. For purification, conventionalmethods can be employed. Examples include purification methods undersolution state such as liquid-liquid extraction for removing residualmonomers or oligomer components by rinsing with water or using suitablesolvents in combination, and ultrafiltration for extracting and removingcomponents having molecular weights below a specified value, and thoseunder solid state such as the reprecipitation method for removing theresidual monomers and the like by adding a resin solution dropwise to apoor solvent and coagulating the resin in the poor solvent, and a methodof rinsing the filtered resin slurry with a poor solvent. For example,the resin is precipitated as a solid by bringing, into contact with thereaction solution, a solvent (poor solvent) in which the resin issparingly soluble or insoluble used in a volume of 10 times or less,preferably from 10 to 5 times the volume of the resin.

As the solvent (precipitation or reprecipitation solvent) used for theprecipitation or reprecipitation from a polymer solution, any one isusable insofar as it is a poor solvent for the polymer. Depending on thetype of the polymer, a solvent can be selected as needed fromhydrocarbons, halogenated hydrocarbons, nitro compounds, ethers,ketones, esters, carbonates, alcohols, carboxylic acids, water, andmixed solvents containing these. Of these, solvents containing at leastan alcohol (especially, methanol or the like) or water are preferred asa precipitation or reprecipitation solvent.

Although the using amount of the precipitation or reprecipitationsolvent can be determined as needed in consideration of efficiency,yield or the like, it is usually from 100 to 10000 parts by mass,preferably from 200 to 2000 parts by mass, more preferably from 300 to1000 parts by mass, based on 100 part by mass of the polymer solution.

Although the temperature during precipitation or reprecipitation isdetermined as needed in consideration of efficiency and operability, itis typically from about 0 to 50° C., preferably around room temperature(for example, about 20 to 35° C.). Precipitation or reprecipitationoperation can be conducted by a known process such as batch process orcontinuous process while using a mixing vessel such as agitation tank.

The polymer obtained by precipitation or reprecipitation is usuallysubjected to conventional solid-liquid separation such as filtration orcentrifugal separation, and provided for use after drying. Filtration isperformed using a solvent-resistant filter material preferably underpressure.

Drying is performed under normal or reduced pressure (preferably underreduced pressure) at from about 30 to 100° C., preferably from about 30to 50° C.

The resin, which has been once precipitated and separated, maythereafter be dissolved in a solvent again, and be brought into contactwith a solvent in which the resin is sparingly soluble or insoluble.Described specifically, the process may comprise a step of, aftercompletion of the radical polymerization reaction, bringing the polymerinto contact with a solvent in which it is sparingly soluble orinsoluble to precipitate the resin (step a), a step of separating theresin from the solution (step b), a step of dissolving the resin in asolvent again to prepare a resin solution A (step c), bringing the resinsolution A into contact with a solvent in which the resin is sparinglysoluble or insoluble used in a volume of less than 10 times (preferablynot greater than 5 times) the volume of the resin solution A toprecipitate a resin solid (step d), and then separating the thusprecipitated resin (step e).

The following are specific examples of Resin (C). The molar ratio of therepeating unit(s) of each resin (corresponding to the molar ratio of theleft-to-right repeating units shown in the specific examples), weightaverage molecular weight and dispersity are shown in the table givenbelow.

TABLE 1 Resin Composition Mw Mw/Mn HR-1  50/50 8800 2.1 HR-2  50/50 53001.9 HR-3  50/50 6200 1.9 HR-4  100 12000 2.0 HR-5  50/50 5800 1.9 HR-6 40/60 13000 2.2 HR-7  60/40 9800 2.2 HR-8  50/50 8000 2.0 HR-9  50/5010900 1.9 HR-10 50/50 6900 1.9 HR-11 60/40 8800 1.5 HR-12 68/32 110001.7 HR-13 100 8000 1.4 HR-14 100 8500 1.4 HR-15 80/20 13000 2.1 HR-1670/30 18000 2.3 HR-17 50/50 5200 1.9 HR-18 50/50 10200 2.2 HR-19 60/407200 2.2 HR-20 32/32/36 5600 2.0 HR-21 30/30/40 9600 1.6 HR-22 40/40/2012000 2.0 HR-23 100 6800 1.6 HR-24 50/50 7900 1.9 HR-25 40/30/30 56002.1 HR-26 50/50 6800 1.7 HR-27 50/50 5900 1.6 HR-28 49/51 6200 1.8 HR-2950/50 8000 1.9 HR-30 30/40/30 9600 2.3 HR-31 30/40/30 9200 2.0 HR-3240/29/31 3200 2.1 HR-33 90/10 6500 2.2 HR-34 50/50 7900 1.9 HR-3520/30/50 10800 1.6 HR-36 50/50 2200 1.9 HR-37 50/50 5900 2.1 HR-3840/20/30/10 14000 2.2 HR-39 50/50 5500 1.8 HR-40 50/50 10600 1.9 HR-4150/50 8600 2.3 HR-42 100 6900 2.5 HR-43 50/50 9900 2.3

A film sparingly soluble in an immersion liquid (which film mayhereinafter be called “top coat”) may be formed between the immersionliquid and the resist film formed using the resist composition of theinvention in order to prevent the resist film from coming into directcontact with the immersion liquid. The functions required of the topcoat include application suitability to the upper layer of the resist,transparency to radiations, in particular, one having a wavelength of193 nm, and poor solubility in the immersion liquid. The top coatpreferably does not mix with the resist and can be uniformly laid overthe resist surface.

From the standpoint of transparency at 193 nm, the top coat ispreferably a polymer not containing aromatic abundantly. Specificexamples include hydrocarbon polymers, acrylate polymers,poly(methacrylic acid), poly(acrylic acid), poly(vinyl ether),silicon-containing polymers, and fluorine-containing polymers. Theabove-described hydrophobic resin (HR) is also suited as the top coat.Since release of impurities from the top coat into the immersion liquidcontaminates an optical lens, the content of residual monomer componentsof the polymer in the top coat is preferably as small as possible.

For removing the top coat, a developer may be used. Alternatively, thetop coat may be removed by using a remover separately. The remover ispreferably a solvent which penetrates less into the resist film. Removalusing an alkali developer is preferred because it enables the removingstep of the top coat simultaneously with a development step of theresist film. Although the top coat is preferably acidic in considerationof the removal with an alkali developer, the top coat may be eitherneutral or alkaline in order to prevent intermixing with the resistfilm.

The smaller the difference in refractive index between the top coat andthe immersion liquid, the more the resolution improves. When an ArFexcimer laser (wavelength: 193 nm) is used in combination with water asan immersion liquid, the top coat for ArF immersion exposure preferablyhas a refractive index close to that of the immersion liquid. In orderto attain a refractive index closer to that of the immersion liquid, thetop coat preferably contains a fluorine atom therein. From thestandpoints of transparency and refractive index, the top coat ispreferably thin.

It is preferred that the top coat mixes with neither the resist nor theimmersion liquid.

From this standpoint, when the immersion liquid is water, the solventused for the top coat is preferably a medium which is sparingly solublein the solvent used for the resist composition and is water-insoluble.When the immersion liquid is an organic solvent, the top coat may beeither water-soluble or water-insoluble.

(D) Solvent

In the photosensitive composition of the invention, the above-describedcomponents are dissolved in a predetermined solvent.

Organic solvents are typically usable as the solvent. Examples of thesolvent include ethylene dichloride, cyclohexanone, cyclopentanone,2-heptanone, γ-butyrolactone, methyl ethyl ketone, ethylene glycolmonomethyl ether, ethylene glycol monoethyl ether, 2-methoxyethylacetate, ethylene glycol monoethyl ether acetate, propylene glycolmonomethyl ether, propylene glycol monomethyl ether acetate, toluene,ethyl acetate, methyl lactate, ethyl lactate, methyl methoxypropionate,ethyl ethoxypropionate, methyl pyruvate, ethyl pyruvate, propylpyruvate, N,N-dimethylformamide, dimethylsulfoxide, N-methylpyrrolidoneand tetrahydrofuran.

Although in the invention, the organic solvents may be used eithersingly or in combination, use of a mixed solvent containing two or moresolvents having respectively different functional groups is preferred.This not only enables heightening of solubility of materials andprevention of generation of particles with the passage of time but alsoformation of a good pattern profile. Preferred functional groups whichthe solvents contain include ester group, lactone group, hydroxyl group,ketone group and carbonate group. As the mixed solvents having differentfunctional groups, mixed solvents shown below as (S1) to (S5) arepreferred.

(S1) Solvents in which a hydroxyl-containing solvent and a hydroxyl-freesolvent have been mixed.

(S2) Solvents in which a solvent having an ester structure and a solventhaving a ketone structure have been mixed.

(S3) Solvents in which a solvent having an ester structure and a solventhaving a lactone structure have been mixed.

(S4) Solvents in which a solvent having an ester structure, a solventhaving a lactone structure, and a hydroxyl-containing solvent have beenmixed.

(S5) Solvent in which a solvent having an ester structure, a solventhaving a carbonate structure, and a hydroxyl-containing solvent havebeen mixed.

Use of such a mixed solvent enables both reduction of particlegeneration during storage of a resist solution and prevention ofgeneration of defects during application.

Examples of the hydroxyl-containing solvent include ethylene glycol,ethylene glycol monomethyl ether, ethylene glycol monoethyl ether,propylene glycol, propylene glycol monomethyl ether, propylene glycolmonoethyl ether, and ethyl lactate. Of these, propylene glycolmonomethyl ether and ethyl lactate are especially preferred.

Examples of the hydroxyl-free solvent include propylene glycolmonomethyl ether acetate, ethyl ethoxypropionate, 2-heptanone,γ-butyrolactone, cyclohexanone, butyl acetate, N-methylpyrrolidone,N,N-dimethylacetamide, and dimethyl sulfoxide. Of these, propyleneglycol monomethyl ether acetate, ethyl ethoxypropionate, 2-heptanone,γ-butyrolactone, cyclohexanone, and butyl acetate are especiallypreferred, with propylene glycol monomethyl ether acetate, ethylethoxypropionate, 2-heptanone, and cyclohexanone being most preferred.

Examples of the solvent having a ketone structure include cyclohexanoneand 2-heptanone. Of these, cyclohexanone is preferred.

Examples of the solvent having an ester structure include propyleneglycol monomethyl ether acetate, ethyl ethoxypropionate and butylacetate. Of these, propylene glycol monomethyl ether acetate ispreferred.

Examples of the solvent having a lactone structure includeγ-butyrolactone.

Examples of the solvent having a carbonate structure include propylenecarbonate and ethylene carbonate. Of these, propylene carbonate ispreferred.

For the resist composition of the invention, the mixed solventcontaining at least one of propylene glycol monomethyl ether acetate,2-heptanone, and γ-butyrolactone is especially preferred.

The hydroxyl-containing solvent and hydroxyl-free solvent are mixed at aratio (mass ratio) of from 1/99 to 99/1, preferably from 10/90 to 90/10,still more preferably from 20/80 to 60/40. The mixed solvent containing50 mass % or greater of the hydroxyl-free solvent is especiallypreferred from the standpoint of uniform application.

The solvent having an ester structure and the solvent having a ketonestructure are mixed at a ratio (mass ratio) of from 1/99 to 99/1,preferably from 10/90 to 90/10, still more preferably from 40/60 to80/20. The mixed solvent containing 50 mass % or greater of the solventhaving an ester structure is especially preferred from the standpoint ofuniform application.

The solvent having an ester structure and the solvent having a lactonestructure are mixed at a ratio (mass ratio) of from 70/30 to 99/1,preferably from 80/20 to 99/1, still more preferably from 90/10 to 99/1.The mixed solvent containing 70 mass % or greater of the solvent havingan ester structure is especially preferred from the standpoint ofstability with time.

When the solvent having an ester structure, the solvent having a lactonestructure, and the hydroxyl-containing solvent are mixed, the mixedsolvent preferably contains from 30 to 80 wt. % of the solvent having anester structure, from 1 to 20 wt % of the solvent having a lactonestructure and from 10 to 60 wt. % of the hydroxyl-containing solvent.

When the solvent having an ester structure, the solvent having acarbonate structure, and the hydroxyl-containing solvent are mixed, themixed solvent preferably contains from 30 to 80 wt. % of the solventhaving an ester structure, from 1 to 20 wt. % of the solvent having acarbonate structure and from 10 to 60 wt. % of the hydroxyl-containingsolvent.

(E) Basic Compound

It is preferred that the positive photosensitive composition of theinvention contains preferably a basic compound (E) to reduce changes inthe performances of it with the passage of time during from exposure toheating or control the in-film diffusion of an acid generated by theexposure.

Examples of the basic compound include nitrogen-containing basiccompounds and onium salt compounds.

Preferred examples of the structure of the nitrogen-containing basiccompound include compounds having partial structures represented by thefollowing formulas (A) to (E).

In the above formulas, R²⁵⁰, R²⁵¹ and R²⁵² each independently representa hydrogen atom, a C₁₋₂₀ alkyl group, a C₃₋₂₀ cycloalkyl group, or aC₆₋₂₀ aryl group, or R²⁵⁰ and R²⁵¹ may be coupled together to form aring. These groups may have a substituent. Preferred examples of thealkyl group and cycloalkyl group having a substituent include C₁₋₂₀aminoalkyl groups and C₁₋₂₀ hydroxyalkyl groups and C₃₋₂₀arninocycloalkyl groups and C₃₋₂₀ hydroxycycloalkyl groups,respectively.

These groups may further contain, in the alkyl chain thereof, an oxygenatom, a sulfur atom or a nitrogen atom.

In the above formula, R²⁵³, R²⁵⁴, R²⁵⁵ and R²⁵⁶ each independentlyrepresents a C₁₋₆ alkyl group or a C₃₋₆ cycloalkyl group.

Preferred examples of the compound include guanidine, aminopyrrolidine,pyrazole, pyrazoline, piperazine, aminomorpholine, aminoalkylmorpholine,and piperidine and they may have a substituent. More preferred examplesof the compound include compounds having an imidazole structure, adiazabicyclo structure, an onium hydroxide structure, an oniumcarboxylate structure, a trialkylamine structure, an aniline structureor a pyridine structure, alkylamine derivatives having a hydroxyl groupand/or an ether bond, and aniline derivatives having a hydroxyl groupand/or an ether bond.

Examples of the compound having an imidazole structure includeimidazole, 2,4,5-triphenylimidazole and benzimidazole. Examples of thecompound having a diazabicyclo structure include1,4-diazabicyclo[2,2,2]octane, 1,5-diazabicyclo[4,3,0]nona-5-ene and1,8-diazabicyclo[5,4,0]undeca-7-ene. Examples of the compound having anonium hydroxide structure include triarylsulfonium hydroxides,phenacylsulfonium hydroxide, and sulfonium hydroxides having a2-oxoalkyl group. Specific examples of them include triphenylsulfoniumhydroxide, tris(t-butylphenyl)sulfonium hydroxide,bis(t-butylphenyl)iodonium hydroxide, phenacylthiophenium hydroxide and2-oxopropylthiophenium hydroxide. Examples of the compound having anonium carboxylate structure include compounds having an onium hydroxidestructure, an anion portion of which has been converted into acarboxylate, for example, acetate, adamantane-1-cabroxylate andperfluroalkyl carboxylate. Examples of the compound having atrialkylamine structure include tri(n-butyl)amine and tri(n-octyl)amine.Examples of the aniline compound include 2,6-diisopropylaniline andN,N-dimethylaniline. Examples of the alkylamine derivative having ahydroxyl group and/or an ether bond include ethanolamine,diethanolamine, triethanolamine, and tris(methoxyethoxyethyl)amine.Examples of the aniline derivative having a hydroxyl group and/or anether bond include N,N-bis(hydroxyethyl)aniline.

It is especially preferred that the resist composition of the inventioncontains at least one of 2,6-diisopropylaniline and tetrabutylammoniumhydroxide.

These basic compounds may be used either singly or in combination. Thebasic compound is used in an amount of typically from 0.001 to 10 mass%, preferably from 0.01 to 5 mass %, based on the solid content in thepositive photosensitive composition. The amount is preferably 0.001 mass% or greater in order to obtain a sufficient effect of the addition,while it is not greater than 10 mass % from the viewpoints ofsensitivity and development properties of a non-exposed portion.

(F) Surfactant

The positive photosensitive composition of the invention containspreferably a surfactant. The surfactant contains preferably any one ofor two or more of fluorine- and/silicon-containing surfactants(fluorine-containing surfactants, silicone-containing surfactants, andsurfactants containing both fluorine and silicon atoms).

By containing the fluorine- and/or silicon-containing surfactant, theresulting positive photosensitive composition of the invention canprovide resist patterns exhibiting good adhesion and less developmentdefects at good sensitivity and resolution when a light source having awavelength of 250 nm or less, especially 220 nm or less is used forexposure.

Examples of the fluorine- and/or silicon-containing surfactant includesurfactants described in JP-A-62-36663, JP-A-61-226746, JP-A-61-226745,JP-A-62-170950, JP-A-63-34540, JP-A-7-230165, JP-A-8-62834,JP-A-9-54432, JP-A-9-5988, and JP-A-2002-277862, and U.S. Pat. Nos.5,405,720, 5,360,692, 5,529,881, 5,296,330, 5,436,098, 5,576,143,5,294,511, and 5,824,451. It is also possible to employ the followingcommercially available surfactants as are.

Examples of commercially available surfactants usable here includefluorine-containing surfactants and silicon-containing surfactants suchas “Eftop EF301” and “Eftop EF303” (each, trade name; product ofShin-Akita Kasei), “Fluorad FC430” and “Fluorad 431” (each, trade name;product of Sumitomo 3M), “Megaface F171”, “Megaface F173”, “MegafaceF176”, “Megaface F189” and “Megaface R08” (each, trade name; product ofDainippon Ink & Chemicals), “Surflon S-382”, “Surflon SC101”, “Surflon102”, “Surflon 103”, “Surflon 104”, “Surflon 105” and “Surflon 106”(each, trade name; product of Asahi Glass), and “Troysol S-366” (tradename; product of Troy Corporation). A polysiloxane polymer “KP341”(trade name; product of Shin-Etsu Chemical) is also usable as thesilicon-containing surfactant.

In addition to the known surfactants as described above, surfactantsusing a fluoroaliphatic-group-containing polymer derived from afluoroaliphatic compound prepared by the telomerization method (alsocalled the telomer method) or the oligomerization method (also calledthe oligomer method) are usable. Such a fluoroaliphatic compound can besynthesized by a process described in JP-A-2002-90991.

As the fluoroaliphatic-group-containing polymer, a copolymer of afluoroaliphatic-group-contianing monomer, a poly(oxyalkylene) acrylateand/or a poly(oxyalkylene) methacrylate is preferred. In the copolymer,these monomers may be either distributed irregularly or blockcopolymerized. Examples of the poly(oxyalkylene) group includepoly(oxyethylene) group, poly(oxypropylene) group and poly(oxybutylene)group. It may also be a unit having alkylenes different in chain lengthin the same chain such as block linked poly(oxyethylene, oxypropyleneand oxyethylene) and block-linked poly(oxyethylene and oxypropylene).Moreover, the copolymer of a fluoroaliphatic-group-containing monomerand a poly(oxyalkylene) acrylate and/or a poly(oxyalkylene) methacrylatemay be not only a binary copolymer but also a trimer or a highercopolymer obtained by simultaneous copolymerization of a monomer havingtwo or more different fluoroaliphatic groups and two or more differentpoly(oxyalkylene) acrylates (or methacrylates).

Examples of commercially available surfactants include “Megaface F178”,“Megaface F-470”, “Megaface F-473”, “Megaface F-475”, “Megaface F-476”and “Megaface F-472” (each, trade name; product of Dainippon Ink &Chemicals). Further examples include copolymers of C₆F₁₃-containingacrylate (or methacrylate) and a poly(oxyalkylene) acrylate (ormethacrylate), copolymers of a C₆F₁₃-containing acrylate (ormethacrylate), poly(oxyethylene) acrylate (or methacrylate) andpoly(oxypropylene) acrylate (or methacrylate), copolymers ofC₈F₁₇-containing acrylate (or methacrylate) and a poly(oxyalkylene)acrylate (or methacrylate), and copolymers of C₈F₁₇-containing acrylate(or methacrylate), poly(oxyethylene) acrylate (or methacrylate) andpoly(oxypropylene) acrylate (or methacrylate).

Examples of surfactants other than the fluorine- and/orsilicon-containing surfactants include nonionic surfactants such aspolyoxyethylene alkyl ethers, polyoxyethylene alkyl allyl ethers,polyoxyethylene/polyoxypropylene block copolymers, sorbitan aliphaticesters, and polyoxyethylene sorbitan aliphatic esters.

These surfactants may be used either singly or in combination.

The surfactant is used in an amount of preferably from 0.0001 to 2 mass%, more preferably from 0.001 to 1 mass %, based on the total amount ofthe positive photosensitive composition (excluding the solvent).

(G) A dissolution inhibiting compound having at least one group selectedfrom alkali soluble groups, hydrophilic groups and acid decomposablegroups and having a molecular weight not greater than 3000 (which mayhereinafter be called “dissolution inhibiting compound”) may be added.

As the dissolution inhibiting compound (G), compounds having an alkalisoluble group such as carboxyl group, sulfonylimide group or hydroxylgroup having, at the α position thereof, substituted with a fluoroalkylgroup, compounds having a hydrophilic group such as hydroxyl group,lactone group, cyano group, amide group, pyrrolidone group orsulfonamide group, or compounds having a group which decomposes by theaction of an acid to release its alkali soluble group or hydrophilicgroup are preferred. The group which decomposes by the action of an acidto release its alkali soluble group or hydrophilic group is preferably acarboxyl group or hydroxyl group protected with an acid decomposablegroup. In order to prevent reduction in the transmittance at 220 nm orless, it is preferred to use, as the dissolution inhibiting compound, acompound not containing an aromatic ring or to add anaromatic-ring-containing compound in an amount not greater than 20 wt. %based on the solid content of the composition.

Preferred examples of the dissolution inhibiting compound includecarboxylic acid compounds having an alicyclic hydrocarbon structure suchas adamantane(di)carboxylic acid, nobomanecarboxylic acid and cholicacid, compounds obtained by protecting such a carboxylic acid with anacid decomposable group, polyols such as saccharides, and compoundsobtained by protecting the hydroxyl group of the polyol with an aciddecomposable group.

In the invention, the dissolution inhibiting compound has a molecularweight not greater than 3000, preferably from 300 to 3000, morepreferably from 500 to 2500.

The dissolution inhibiting compound is added in an amount of preferablyfrom 3 to 40 mass %, more preferably from 5 to 20 mass % based on thesolid content of the photosensitive composition.

The following are the specific examples of the dissolution inhibitingcompound, but the invention is not limited to them.

<Other Additives>

The positive photosensitive composition of the invention may furthercontain additives such as dye, plasticizer, photosensitizer and compoundaccelerating dissolution in a developer as needed.

The compound usable in the invention for accelerating dissolution in adeveloper is a low molecular compound having a molecular weight notgreater than 1,000 and having two or more phenolic OH groups or one ormore carboxyl groups. The compound, if having a carboxyl group, ispreferably an alicyclic or aliphatic compound.

The dissolution accelerating compound is added in an amount ofpreferably from 2 to 50 mass %, more preferably from 5 to 30 mass basedon the acid-decomposable resin. From the viewpoints of reducing adevelopment residue and preventing pattern deformation duringdevelopment, the amount not greater than 50 mass % is preferred.

Such phenolic compounds having a molecular weight not greater than 1,000can be easily synthesized by those skilled in the art with reference to,for example, processes described in JP-A-4-122938 and JP-A-2-28531, U.S.Pat. No. 4,916,210, and EP219294.

Specific examples of the carboxyl-containing alicyclic or aliphaticcompound include, but not limited to, carboxylic acid derivatives havinga steroid structure such as cholic acid, deoxycholic acid andlithocholic acid, adamantanecarboxylic acid derivatives,adamantanedicarboxylic acid, cyclohexanecarboxylic acid,cyclohexanecarboxylic acid, and cyclohexanedicarboxylic acid.

(Pattern Forming Method)

The positive photosensitive composition of the invention is used bydissolving the above-described components in a predetermined organicsolvent, preferably the above-described mixed solvent, filtering theresulting solution, and applying the filtrate onto a predeterminedsupport as described below. The filter used for filtration is preferablymade of polytetrafluoroethylene, polyethylene or nylon and has a poresize of 0.1 micron or less, more preferably 0.05 micron or less, stillmore preferably 0.03 micron or less.

For example, the positive photosensitive composition is applied onto asubstrate (such as silicon/silicon dioxide-coated substrate) as used inthe fabrication of a precision integrated circuit device by anappropriate application means such as spinner or coater, and then driedto form a photosensitive film.

The photosensitive film is exposed to actinic light or radiation througha predetermined mask, preferably baked (heated), then developed andrinsed, whereby a good pattern can be obtained.

During exposure to active light or radiation, exposure (immersionexposure) is preferably performed by filling a liquid (immersion medium)having a refractive index higher than that of air between thephotosensitive film and a lens. By this immersion exposure, theresolution can be enhanced. The immersion medium may be any liquidinsofar as it has a refractive index higher than that of air, but purewater is preferred. In order to prevent the immersion medium and thephotosensitive film from coming into direct contact during immersionexposure, an overcoat layer may be provided on the photosensitive film.This makes it possible to prevent the release of the composition fromthe photosensitive film to the immersion medium, thereby reducingdevelopment defects.

Prior to the formation of the photosensitive film, an antireflectivefilm may be formed on the substrate by application in advance.

As the antireflective film, either one of an inorganic film made oftitanium, titanium dioxide, titanium nitride, chromium oxide, carbon oramorphous silicon or an organic film made of a light absorber andpolymer materials is usable. As the organic antireflective film,commercially available organic antireflective films such as “DUV-30series” or “DUV-40 series” (trade name) of Brewer Science, or “AR-2”,“AR-3” or “AR-5” (trade name) of Shipley are also usable.

Examples of the actinic light or radiation include infrared light,visible light, ultraviolet light, far ultraviolet light, X-ray andelectron beam. Of these, far ultraviolet light having a wavelength of250 nm or less, more preferably 220 nm or less is preferred. Specificexamples include KrF excimer laser light (248 nm), ArF excimer laserlight (193 nm), F₂ excimer laser light (157 nm), X-ray and electronbeam, of which ArF excimer laser light, F₂ excimer laser light, EUV (13nm) and electron beam are preferred.

In the development step, an alkali developer is used as follows. As thealkali developer for resist compositions, an aqueous alkaline solutionsuch as an aqueous solution of an inorganic alkali such as sodiumhydroxide, potassium hydroxide, sodium carbonate, sodium silicate,sodium metasilicate or aqueous ammonia, a primary amine such asethylaraine or n-propylamine, a secondary amine such as diethylamine ordi-n-butylamine, a tertiary amine such as triethylamine ormethyldiethylamine, an alcohol amine such as dimethylethanolamine ortriethanolamine, a quaternary ammonium salt such as tetramethylammoniumhydroxide or tetraethylammonium hydroxide, or a cyclic amine such aspyrrole or piperidine.

The above-described alkali developer to which an adequate amount of analcohol or surfactant has been added may also be used.

The alkali developer has an alkali concentration of typically from 0.1to 20 mass %.

The alkali developer has a pH of typically from 10.0 to 15.0.

Example 1

The present invention will hereinafter be described in further detail byExamples. It should however be borne in mind that the invention is notlimited by them.

SYNTHESIS EXAMPLE Synthesis of Resin (C)

26.81 g of 2,2,3,3,4,4,4-heptafluorobutyl methacrylate and 14.22 g oftert-butyl methacrylate were dissolved in propylene glycol monomethylether acetate to prepare 188.75 g of a solution having a solid contentconcentration of 20%. To the resulting solution was added 3.5 mol %(1.612 g) of a polymerization initiator “V-601” (trade name, product ofWako Pure Chemical Industries). In a nitrogen atmosphere, the resultingmixture was added dropwise over 4 hours to 16.41 g of propylene glycolmonomethyl ether acetate heated to 80° C. After completion of thedropwise addition, the reaction mixture was stirred at 80° C. for 2hours. The reaction mixture was cooled to room temperature and thenadded dropwise to 20 times the amount, based on the amount of thereaction mixture, of a 5:1 methanol:water mixed solvent. A solid thusprecipitated was collected by filtration to obtain 38.6 g of Resin HR-1as the intended product.

The resin had a weight average molecular weight of 8800 and dispersityof 2.1 as determined by GPC measurement relative to polystyrenestandards.

Other resins as Resin (C) were also prepared similarly.

<Resist Preparation>

Components shown below in Table 2 were dissolved in solvents andsolutions having a solid content concentration of 7 mass % wereprepared, respectively. The resulting solutions were filtered through apolyethylene filter having a pore size of 0.1-μm to prepare positiveresist solutions. The positive resist compositions thus prepared wereevaluated by the following method and the results are shown in the tablebelow.

When a plurality of components are used, their mass ratio is shown inthe table.

[Imaging Performance Test] (Exposure Conditions 1)

An organic antireflective coating “ARC291” (trade name; product ofNissan Chemical) was applied onto a silicon wafer and then, baked at205° C. for 60 seconds to form an antireflective film of 78 nm. Thepositive resist composition prepared above was then applied to theantireflective film and then baked at 120° C. for 60 seconds to preparea resist film of 250 nm. The wafer thus obtained was subjected topattern exposure with an ArF excimer laser scanner (“PAS 5500/1100”,trade name; product of ASML, NA: 0.75, σ0/σ1=0.85/0.55). After heatingat 120° C. for 60 seconds, development for 30 seconds with an aqueoussolution (2.38 wt. %) of tetramethyl ammonium hydroxide, rinsing withpurewater and spin drying were performed successively to obtain a resistpattern.

(Exposure Conditions 2)

The present conditions are for the formation of a resist pattern inaccordance with immersion exposure using pure water.

An organic antireflective coating “ARC291” (trade name; product ofNissan Chemical) was applied onto a silicon wafer and then baked at 205°C. for 60 seconds to form an antireflective film of 78 nm The positiveresist composition prepared above was then applied to the antireflectivefilm, followed by baking at 120° C. for 60 seconds to prepare a resistfilm of 250 nm. The wafer thus obtained was subjected to patternexposure with an ArF excimer laser immersion scanner (NA: 0.75). As theimmersion liquid, ultrapure water having an impurity concentration notgreater than 5 ppb was employed. After heating at 120° C. for 60seconds, development for 30 seconds with an aqueous solution (2.38 wt.%) of tetramethyl ammonium hydroxide, rinsing with purewater and spindrying were performed successively to obtain a resist pattern.

[Evaluation of Line Edge Roughness]

The evaluation of line edge roughness (LER) was conducted by observingan isolated pattern of 120 nm through a length-measuring scanningelectron microscope (SEM), measuring, with respect to the longitudinaledge in the range of 5 μm of the line pattern, the distance from thereference line where the edge should be present at 50 points by using alength-measuring SEM (“S-8840”, trade name; product of Hitachi Ltd.),determining the standard deviation, and calculating 3σ. The unit is nm.The smaller the value, the better the performance.

[Followability of Water]

Each of the positive resist compositions prepared above was applied ontoa silicon wafer and baked at 115° C. for 60 seconds to form a 200-nmresist film. As illustrated in FIG. 1, 15 ml of distilled water wasdropped from a pipette onto the center portion of the wafer 1 having theresist film formed thereon. Then, a 10-cm-square quartz plate 3 providedwith a kite string 2 was placed on the distilled water puddle so thatthe entire space between the wafer 1 and the quartz plate 3 was filledwith distilled water 4.

Next, the kite string 2 attached to the quartz plate 3 was wound arounda rotating member of a motor 5 which rotated at a speed of 30 cm/secwhile fixing the wafer 1. The motor 5 was driven for 0.5 second to movethe quartz plate 3. After the quartz plate 3 was moved, the amount ofthe distilled water remaining under the quartz plate 3 was evaluated inaccordance with the following criteria and employed as an indication offollowability of water.

FIG. 2A to FIG. 2D schematically illustrate various patterns observedwhen the quartz plate was observed from above after movement. A hatchedportion 6 is an area of the distilled water remaining under the quartzplate 3, while a blank portion 7 is an area in which the distilled waterhas failed to follow the movement of the quartz plate 3 and air hasentered therein.

As illustrated in FIG. 2A, when the distilled water remains on the wholesurface of the substrate even after the quartz plate 3 was moved, thefollowability of water is rated A; as illustrated in FIG. 2B, when thearea in which air has entered does not exceed about 10% of the wholesubstrate area, the followability of water is rated B; as illustrated inFIG. 2C, when the area in which air has entered is 20% or more but lessthan 50% of the whole substrate area, the followability of water israted C; and as illustrated in FIG. 2D, when the area in which air hasentering is about 50% or more of the whole substrate area, thefollowability of water is rated D.

TABLE 2 Resin Acid Basic LER LER Follow- (A) generator Solvent CompoundResin (C) Surfactant (Condi- (Condi- ability (2 g) (mg) (mass ratio)(mg) (mg) (mg) tions 1) tions 2) of water Comp. RX P-13 SL-1/SL-4 N-1 —W-1 19 18 D Ex. 1 (80) (60/40) (7) (3) Comp. RX P-13 SL-1/SL-4 N-1 HR-1W-1 16 16 B Ex. 2 (80) (60/40) (7) (80) (3) Ex. 1 RA-1 P-13 SL-1/SL-4N-1 HR-1 W-1 14 14 B (80) (60/40) (7) (80) (3) Ex. 2 RA-1 P-11 SL-1/SL-4N-1 HR-1 W-1 13 13 B (80) (60/40) (7) (80) (3) Ex. 3 RA-1 P-11 SL-1/SL-2N-1 HR-1 W-1 12 12 B (80) (60/40) (7) (80) (3) Ex. 4 RA-1 P-11 SL-1/SL-3N-1 HR-1 W-1 12 12 B (80) (60/40) (7) (80) (3) Ex. 5 RA-1 P-11 SL-1/SL-2N-2 HR-1 W-1 11 11 A (80) (60/40) (7) (80) (3) Ex. 6 RA-1 P-11 SL-1/SL-2N-3 HR-1 W-1 11 11 B (80) (60/40) (7) (80) (3) Ex. 7 RA-1 P-1 SL-1/SL-4N-1 HR-1 W-1 12 12 B (80) (60/40) (7) (80) (3) Ex. 8 RA-1 P-2 SL-1/SL-4N-1 HR-1 W-1 12 12 B (80) (60/40) (7) (80) (3) Ex. 9 RA-1 P-3 SL-1/SL-4N-1 HR-1 W-1 10 9 B (80) (60/40) (7) (80) (3) Ex. 10 RA-1 P-4 SL-1/SL-4N-1 HR-1 W-1 11 12 A (80) (60/40) (7) (80) (3) Ex. 11 RA-1 P-5 SL-1/SL-4N-1 HR-1 W-1 12 12 B (80) (60/40) (7) (80) (3) Ex. 12 RA-1 P-6 SL-1/SL-4N-1 HR-1 W-1 11 10 B (80) (60/40) (7) (80) (3) Ex. 13 RA-1 P-7 SL-1/SL-4N-1 HR-1 W-1 12 12 B (80) (60/40) (7) (80) (3) Ex. 14 RA-1 P-8 SL-1/SL-4N-1 HR-1 W-1 10 9 B (80) (60/40) (7) (80) (3) Ex. 15 RA-1 P-9 SL-1/SL-4N-1 HR-1 W-1 13 12 B (80) (60/40) (7) (80) (3) Ex. 16 RA-1 P-10SL-1/SL-4 N-1 HR-1 W-1 13 12 B (80) (60/40) (7) (80) (3) Ex. 17 RA-1P-12 SL-1/SL-4 N-1 HR-1 W-1 13 12 B (80) (60/40) (7) (80) (3) Ex. 18RA-2 P-1 SL-1/SL-2 N-5 HR-1 W-1 11 10 B (80) (60/40) (7) (80) (3) Ex. 19RA-3 P-2 SL-1/SL-2 N-2 HR-4 W-1 12 11 A (80) (60/40) (7) (80) (3) Ex. 20RA-4 P-3 SL-1/SL-2 N-3 HR-10 W-1 11 11 B (80) (60/40) (7) (80) (3) Ex.21 RA-5 P-4 SL-2/SL-4/SL-6 N-2 HR-15 W-1 9 9 B (80) (40/59/1) (9) (35)(3) Ex. 22 RA-6 P-5 SL-2/SL-4 N-6 HR-21 W-4 10 10 A (100) (70/30) (7)(60) (4) Ex. 23 RA-7 P-6 SL-2/SL-4 N-1 HR-25/HR-10 W-1 11 10 A (40/60)(60/40) (7) (20/30) (3) Ex. 24 RA-8 P-7 SL-1/SL-2 N-2 HR-22 W-4 11 11 B(20/80) (50/50) (6) (80) (3) Ex. 25 RA-9 P-8 SL-1/SL-2 N-5 HR-25 W-5 8 8A (110) (30/70) (7) (60) (5) Ex. 26 RA-10 P-9 SL-3/SL-4/SL-6 N-4 HR-29W-1 7 7 B (120) (40/59/1) (7) (90) (3) Ex. 27 RA-11 P-10/P-9 SL-2/SL-3N-2 HR-30 W-2 9 9 B (40/60) (60/40) (6) (80) (3) Ex. 28 RA-12 P-12/P-9SL-2/SL-3 — HR-31 W-4 10 9 A (100/10) (60/40) (10) (5)

The symbols employed in Table 2 each has the following meaning.

The structures and the like of Acid decomposable resin (A) employed inExamples will be shown below.

The structures of Compound (B) used in Examples will be shown below.

-   N-1: N,N-dibutylaniline-   N-2: Tetrabutylammonium hydroxide-   N-3: 2,6-Diisopropylaniline-   N-4: Tri-n-octylamine-   N-5: N,N-Dihydroxyethylaniline-   N-6: N,N-dihexylaniline-   W-1: “Megaface F176” (trade name; product of Dainippon Ink &    Chemicals) (fluorine-containing)-   W-2: “Megaface R08” (trade name; product of Dainippon Ink &    Chemicals) (fluorine- and silicon-containing)-   W-3: Polysiloxane polymer “KP-341” (trade name; product of Shin-Etsu    Chemical) (silicon-containing-   W-4: “Troysol S-366” (trade name; product of Troy Corporation)-   W-5: “PF656” (trade name; product of OMNOVA, fluorine-containing)-   W-6: “PF6320” (trade name; product of OMNOVA, fluorine-containing)-   SL-1: Cyclohexanone-   SL-2: Propylene glycol monomethyl ether acetate-   SL-3: 2-Heptanone-   SL-4: Propylene glycol monomethyl ether-   SL-5: γ-Butyrolactone-   SL-6: Propylene carbonate

It is apparent from the results shown in Table 2 that the photosensitivecompositions of the invention are excellent in followability of waterduring immersion exposure and have reduced line edge roughness.

INDUSTRIAL APPLICABILITY

The invention provides a positive resist composition causing less lineedge roughness due to normal exposure or immersion exposure andexcellent in followability of water during immersion exposure; and apattern forming method using the composition.

The entire disclosure of each and every foreign patent application fromwhich the benefit of foreign priority has been claimed in the presentapplication is incorporated herein by reference, as if fully set forth.

1. A positive resist composition comprising: (A) a resin that has anacid decomposable repeating unit represented by the following formula(I) and a repeating unit having a lactone structure represented by thefollowing formula (LC 1-4) and increases its solubility in an alkalideveloper by action of an acid; (B) a compound that generates an acid inirradiation with actinic light or radiation; (C) a resin that has: atleast one of a fluorine atom and a silicon atom; and the following group(x) or group (y); and (D) a solvent: (x) an alkali soluble group, (y) agroup which decomposes by action of an alkali developer and increases asolubility of the resin (C) in an alkali developer, wherein, the resin(C) is different from the resin (A), and the content of the resin (C) isfrom 0.1 to 10 mass %, based on the total solid content of thecomposition,

wherein, Xa₁ represents a hydrogen atom, an alkyl group, a cyano groupor a halogen atom, Ry₁ to Ry₃ each independently represents an alkylgroup or a cycloalkyl group, provided that at least two of Ry₁ to Ry₃are coupled to form a ring structure or Ry₁ represents a cycloalkylgroup, and Z represents a divalent linking group,

wherein Rb′₂ represents a substituent, n2 stands for an integer from 0to 4, when n2 is 2 or greater, a plurality of Rb′₂s may be the same ordifferent, or the plurality of Rb′₂s may be coupled to form a ring.
 2. Apositive resist composition according to claim 1, wherein Z in theformula (I) is a divalent linear hydrocarbon group or a divalent cyclichydrocarbon group.
 3. A positive resist composition according to claim1, wherein in the formula (I), at least two of Ry₁ to Ry₃ are coupled toform a ring structure and the ring structure is a cyclopentane ring, acyclohexane ring, an adamantane ring, a norbornane ring or atetracyclododecane ring.
 4. A positive resist composition according toclaim 1, wherein in the formula (I), Ry₁ represents a cycloalkyl groupand the cycloalkyl group is cyclopentyl group, cyclohexyl group andcyclopropyl group, adamantyl group, norbornane group,tetracyclododecanyl group, tricyclodecanyl group or diamantyl group. 5.A positive resist composition according to claim 1, wherein Rb′₂represents an alkyl group having a carbon number of 1 to 8, a cycloalkylgroup having a carbon number of 4 to 7, an alkoxy group having a carbonnumber of 1 to 8, an alkoxycarbonyl group having a carbon number of 1 to8, a carboxyl group, a halogen atom, a hydroxyl group, a cyano group,and an acid decomposable group.
 6. A positive resist compositionaccording to claim 1, wherein the component (B) comprises a compoundgenerating an acid represented by formula (BII):

wherein in the formula (BII), Rb₁ represents a group having an electronwithdrawing group, Rb₂ represents an organic group having no electronwithdrawing group, m and n each stands for an integer from 0 to 5 withthe proviso that m+n≦5, when m stands for 2 or greater, a plurality ofRb₁s may be the same or different, and when n stands for 2 or greater, aplurality of Rb₂s may be the same or different.
 7. A positive resistcomposition according to claim 6, wherein in the formula (BII), m standsfor from 1 to 5 and the electron withdrawing group of Rb₁ is at leastone atom or group selected from a fluorine atom, a fluoroalkyl group, anitro group, an ester group, and a cyano group.
 8. A positive resistcomposition according to claim 6, wherein in the formula (BII), theorganic group having no electron withdrawing group of Rb₂ is a grouphaving an alicyclic group.
 9. A positive resist composition according toclaim 1, wherein the resin (C) has a repeating unit having a lactonegroup.
 10. A positive resist composition according to claim 1, whereinthe resin (C) is a resin having a fluorine-containing alkyl group havinga carbon number of 1 to 4, a fluorine-containing cycloalkyl group or afluorine-containing aryl group.
 11. A positive resist compositionaccording to claim 1, wherein the resin (C) has an alcoholic hydroxylgroup and an alcohol moiety of the alcoholic hydroxyl group is afluorinated alcohol.
 12. A pattern forming method comprising forming aresist film with a positive resist composition as claimed in claim 1;and exposing and developing the resist film.
 13. A pattern formingmethod according to claim 12, wherein the resist film is exposed via animmersion liquid.
 14. A resist film formed by a positive resistcomposition as claimed in claim 1.